Hua Fan, Huichao Yue, Jiangmin Mao, Ting Peng, Siming Zuo, Quanyuan Feng, Qi Wei, Hadi Heidari. Modelling and fabrication of wide temperature range Al0.24Ga0.76As/GaAs Hall magnetic sensors[J]. Journal of Semiconductors, 2022, 43(3): 034101

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- Journal of Semiconductors
- Vol. 43, Issue 3, 034101 (2022)

Fig. 1. (Color online) GaAs Hall-effect sensor layers structures.

Fig. 2. (Color online) (a) Fully symmetrical cross-shaped Hall element. (b) The Hall voltage of the fully symmetrical cross Hall element changes with the shape.

Fig. 3. (Color online) (a) Narrow cross-shaped Hall element. (b) The Hall voltage of the narrow cross Hall element varies with the width of the output port.

Fig. 4. (Color online) GaAs Hall-effect sensor built in Silvaco TCAD.

Fig. 5. (Color online) (a) The 2D vertical cut-plane of Hall-effect sensor. GaAs layer (bottle green) is the doping layer and Alx Ga1−x As/GaAs (green) is the channel layer. (b) Electrons distribution of 2DEG GaAs Hall-effect sensor in 1D when a 5 V supply voltage is added. (c) Simulated output voltage of Alx Ga1−x As/GaAs Hall sensor.

Fig. 6. (Color online) Fabricated Alx Ga1−x As/GaAs Hall sensor microphotograph.

Fig. 7. (Color online) (a) Simulated sensitivity of the voltage-mode Hall sensor. (b) Dependence of temperature on output voltage. (c) Simulated offset with different misalignment of output contacts.

Fig. 8. (Color online) Combining 2 types of epilayer structure and 2 physical models, 4 simulation results are presented. Experiment results are added for comparison with (a, b) magnetic field and (c, d) temperature (50 mT).
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Table 1. Comparison of five materials of Hall-effect devices.
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Table 2. The comparison of simulation results and experimental results at 300 K.
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Table 3. The comparison of different types of Hall-effect devices.

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