• Journal of Semiconductors
  • Vol. 43, Issue 3, 034101 (2022)
Hua Fan1,6, Huichao Yue1, Jiangmin Mao1, Ting Peng2..., Siming Zuo3, Quanyuan Feng4, Qi Wei5 and Hadi Heidari6|Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 2Chengdu HiWafer Semiconductor Co., Ltd., Chengdu 610225, China
  • 3James Watt School of Engineering, University of Glasgow, G12 8QQ, Glasgow, UK
  • 4Southwest Jiaotong University, Chengdu 611756, China
  • 5Department of Precision Instrument, Tsinghua University, Beijing 100084, China
  • 6Institute of Electronic and Information Engineering of UESTC in Guangdong, University of Electronic Science and Technology of China, Dongguan 523878, China
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    DOI: 10.1088/1674-4926/43/3/034101 Cite this Article
    Hua Fan, Huichao Yue, Jiangmin Mao, Ting Peng, Siming Zuo, Quanyuan Feng, Qi Wei, Hadi Heidari. Modelling and fabrication of wide temperature range Al0.24Ga0.76As/GaAs Hall magnetic sensors[J]. Journal of Semiconductors, 2022, 43(3): 034101 Copy Citation Text show less
    (Color online) GaAs Hall-effect sensor layers structures.
    Fig. 1. (Color online) GaAs Hall-effect sensor layers structures.
    (Color online) (a) Fully symmetrical cross-shaped Hall element. (b) The Hall voltage of the fully symmetrical cross Hall element changes with the shape.
    Fig. 2. (Color online) (a) Fully symmetrical cross-shaped Hall element. (b) The Hall voltage of the fully symmetrical cross Hall element changes with the shape.
    (Color online) (a) Narrow cross-shaped Hall element. (b) The Hall voltage of the narrow cross Hall element varies with the width of the output port.
    Fig. 3. (Color online) (a) Narrow cross-shaped Hall element. (b) The Hall voltage of the narrow cross Hall element varies with the width of the output port.
    (Color online) GaAs Hall-effect sensor built in Silvaco TCAD.
    Fig. 4. (Color online) GaAs Hall-effect sensor built in Silvaco TCAD.
    (Color online) (a) The 2D vertical cut-plane of Hall-effect sensor. GaAs layer (bottle green) is the doping layer and AlxGa1−xAs/GaAs (green) is the channel layer. (b) Electrons distribution of 2DEG GaAs Hall-effect sensor in 1D when a 5 V supply voltage is added. (c) Simulated output voltage of AlxGa1−xAs/GaAs Hall sensor.
    Fig. 5. (Color online) (a) The 2D vertical cut-plane of Hall-effect sensor. GaAs layer (bottle green) is the doping layer and AlxGa1−xAs/GaAs (green) is the channel layer. (b) Electrons distribution of 2DEG GaAs Hall-effect sensor in 1D when a 5 V supply voltage is added. (c) Simulated output voltage of AlxGa1−xAs/GaAs Hall sensor.
    (Color online) Fabricated AlxGa1−xAs/GaAs Hall sensor microphotograph.
    Fig. 6. (Color online) Fabricated AlxGa1−xAs/GaAs Hall sensor microphotograph.
    (Color online) (a) Simulated sensitivity of the voltage-mode Hall sensor. (b) Dependence of temperature on output voltage. (c) Simulated offset with different misalignment of output contacts.
    Fig. 7. (Color online) (a) Simulated sensitivity of the voltage-mode Hall sensor. (b) Dependence of temperature on output voltage. (c) Simulated offset with different misalignment of output contacts.
    (Color online) Combining 2 types of epilayer structure and 2 physical models, 4 simulation results are presented. Experiment results are added for comparison with (a, b) magnetic field and (c, d) temperature (50 mT).
    Fig. 8. (Color online) Combining 2 types of epilayer structure and 2 physical models, 4 simulation results are presented. Experiment results are added for comparison with (a, b) magnetic field and (c, d) temperature (50 mT).
    MaterialElectron mobility (cm2/(V·s)) Energy gap (eV)
    Si13501.1
    GaN16003.39
    GaAs85001.43
    InAs400000.36
    InSb780000.17
    Table 1. Comparison of five materials of Hall-effect devices.
    ParameterCaughey- Thomas[16]Caughey- Thomas[13]Experiment
    Mobility (cm2 /(V·s)) 414445044480
    Hall mobility (cm2 /(V·s)) 455845045010
    Sensitivity (V/(V·T)) 0.260.240.28
    Absolute sensitivity (V/T) 1.321.21.38
    Table 2. The comparison of simulation results and experimental results at 300 K.
    ParameterJovanovic[15]Dowling[7]Jankowski[17]Haned[9]Wouters[18]This work
    MaterialSiGaNInSbGaAs/InGaAsGaAsGaAs
    Power supply (V)0.4–0.50.04–0.55 × 10–41.750.0745
    Sensitivity (V/(V·T))0.0430.0572 V/(A·T)400 V/(A·T)100–107 V/(A·T)0.28
    Absolute sensitivity (V/T)0.0172–0.02150.00228–0.02850.10.4<0.01071.38
    Offset (mV)19.472 × 10–50.142–805
    Input resistance (kΩ)1.560.011.750.65–0.741.2
    Output resistance (kΩ)1.560.011.750.65–0.742.4
    Table 3. The comparison of different types of Hall-effect devices.
    Hua Fan, Huichao Yue, Jiangmin Mao, Ting Peng, Siming Zuo, Quanyuan Feng, Qi Wei, Hadi Heidari. Modelling and fabrication of wide temperature range Al0.24Ga0.76As/GaAs Hall magnetic sensors[J]. Journal of Semiconductors, 2022, 43(3): 034101
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