• Journal of Infrared and Millimeter Waves
  • Vol. 34, Issue 6, 721 (2015)
CAO Gao-Qi1、2、3、*, TANG Heng-Jing1、2, LI Tao1、2, SHAO Xiu-Mei1、2, LI Xue1、2, and GONG Hai-Mei1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2015.06.016 Cite this Article
    CAO Gao-Qi, TANG Heng-Jing, LI Tao, SHAO Xiu-Mei, LI Xue, GONG Hai-Mei. Temperaturedependent characteristics of ohmic contact in heterojunction InP/InGaAs detector[J]. Journal of Infrared and Millimeter Waves, 2015, 34(6): 721 Copy Citation Text show less
    References

    [1] MacDougal M, Geske J, Wang C, et al. Low dark current InGaAs detector arrays for night vision and astronomy[J]. SPIE, 2009, 7298:72983F-1-72983F-10.

    [4] Cohen M J, Lange M J, Ettenberg M H, et al. A thin film indium gallium arsenide focal plane array for visible and near infrared hyperspectral imaging[C]. LEOS, 1999: 744-745.

    [5] Fatemi N’ S . The achievement of near-theoretical-minimum contact resistance to InP[J]. J Appl. Phys, 1993, 74(11):6740-6746.

    [6] Hasenberg T C, Garmire E. An improved Au/Be contact to p-type InP[J]. J Appl. Phys, 1987, 61(2): 808-809.

    [7] Baca A G, Ren F,Zolper J C,et al. A survey of ohmic contacts to III-V compound semiconductors[J]. Thin Solid Films, 1997, 308309:599-606.

    [9] Yu A Y C. Electron tunneling and contact resistance of metal-silicon contact barriers[J], Solid-State electronics, 1970, 13: 239-247.

    [10] Weizer V G, Fatemi N S. Contact spreading and the Au3In to Au9In transition in the Au-InP system [J]. J Appl. Phys, 1990, 68(5): 2275-2284.

    CAO Gao-Qi, TANG Heng-Jing, LI Tao, SHAO Xiu-Mei, LI Xue, GONG Hai-Mei. Temperaturedependent characteristics of ohmic contact in heterojunction InP/InGaAs detector[J]. Journal of Infrared and Millimeter Waves, 2015, 34(6): 721
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