• Journal of Infrared and Millimeter Waves
  • Vol. 43, Issue 6, 768 (2024)
Yan CHEN1, Fan-Zhong MENG1, Hao-Dong XUE1, Ao ZHANG2,*, and Jianjun GAO3
Author Affiliations
  • 1The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China
  • 2School of Microelectronics(School of Integrated Circuits),Nantong University,Nantong,226019,China
  • 3School of Physics and Electronic Science,East China Normal University,Shanghai,200241
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    DOI: 10.11972/j.issn.1001-9014.2024.06.007 Cite this Article
    Yan CHEN, Fan-Zhong MENG, Hao-Dong XUE, Ao ZHANG, Jianjun GAO. 75~110 GHz wideband frequency tripler chip based on planar schottky diode[J]. Journal of Infrared and Millimeter Waves, 2024, 43(6): 768 Copy Citation Text show less

    Abstract

    Based on the GaAs planar Schottky diode process, a W band wideband frequency tripler MMIC is designed with a reverse parallel diode pair. By combining the finite element method and equivalent circuit method, an accurate equivalent circuit model of the planar Schottky diode is built in the frequency range of 10~280 GHz. The nonlinear harmonic balance tool is utilized to achieve the optimal frequency tripler design in the W band. The measurement results show that the frequency multiplication loss is less than 15 dB under 17 dBm driving power, and efficiency up to 6.7%. The chip size is 0.80 mm×0.65 mm×0.05 mm.
    Yan CHEN, Fan-Zhong MENG, Hao-Dong XUE, Ao ZHANG, Jianjun GAO. 75~110 GHz wideband frequency tripler chip based on planar schottky diode[J]. Journal of Infrared and Millimeter Waves, 2024, 43(6): 768
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