Watt-level high-power passively Q-switched laser based on a black phosphorus solution saturable absorber

Xi Wang; Zhenfu Wang; Yonggang Wang; Lu Li; Guowen Yang; Jinping Li

doi:10.3788/COL201715.011402

Journals >Chinese Optics Letters >Volume 15 >Issue 1 >Page 011402 > Article

Chinese Optics Letters
Vol. 15, Issue 1, 011402 (2017)

Watt-level high-power passively Q-switched laser based on a black phosphorus solution saturable absorber

Xi Wang^1、2, Zhenfu Wang¹, Yonggang Wang^1、3、*, Lu Li^1、2, Guowen Yang¹, and Jinping Li³

Author Affiliations

¹State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, China

²University of Chinese Academy of Sciences, Beijing 100049, China

³School of Physics and information Technology, Shaanxi Normal University, Xi’an 710119, China

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DOI: 10.3788/COL201715.011402 Cite this Article Set citation alerts

Xi Wang, Zhenfu Wang, Yonggang Wang, Lu Li, Guowen Yang, Jinping Li. Watt-level high-power passively Q-switched laser based on a black phosphorus solution saturable absorber[J]. Chinese Optics Letters, 2017, 15(1): 011402 Copy Citation Text

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Fig. 1. (a) BP nanosheets solution. (b) Transmission spectra. (c) Raman spectra of BP. (d) The nonlinear transmission curve of BP solution SA.

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Fig. 2. Schematic of the experimental setup.

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Fig. 3. (a) Output power versus the pump power. (b) The pulse trains obtained at different pump powers. (c) Evolutions of the pulse repetition rate and of the pulse width with the pump power. (d) Single pulse profile of the QS laser. (e) Optical spectrum.

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SA	Gain medium	Wavelengh (nm)	Laser operation	Pulse width	Output power (mW)	Reference
${Bi}_{2} {Se}_{3}$ SAM	$Nd : {YVO}_{4}$	1066	QS	250 ns	74.2	[9]
${Bi}_{2} {Se}_{3}$ quartz substrate	$Nd : {GdVO}_{4}$	1063	QS	666 ns	32	[35]
${Bi}_{2} {Te}_{3}$	$Nd : {YVO}_{4}$	1064	QS	97 ns	18.6	[34]
${Bi}_{2} {Se}_{3}$ thin film	$Yb : KGW$	1042	QS	1.5 μs	820	[33]
${MoS}_{2}$ -BK7	$Nd : {YAlO}_{3}$	1079	QS	227 ns	260	[15]
${MoS}_{2}$ mica	$Tm : {GdVO}_{4}$	1902	QS	800 ns	100	[16]
${MoS}_{2}$ substrate	Yb:LGGG	1025–1028	QS	182 ns	600	[18]
${WS}_{2}$ ${SiO}_{2}$ substrate	Yb:YAG	1050	ML	736 fs	270	[20]
${MoS}_{2}$ SAM	$Nd : {YVO}_{4}$	1064	ML	12.7 ps	89	[21]
BP SAM	Yb,Lu:GALGO	1053	ML	272 fs	820	[29]
BP quartz glass	$Yb : {ScBO}_{3}$	1063	QS	495 ns	167	[30
BP SAM	Cr:ZnSe	2400	QS	189 ns	36	[31]
BP quartz glass	$\Pr : {GdLiF}_{4}$ $Nd : {GdVO}_{4}$ Tm:Ho:YGG	639 1064 2100	QS	189 ns 495 ns 636 ns	18 22 27	[26]
BP gold-film mirror	Yb:LuYAG $Tm : {CaYAlO}_{4}$ $Er : Y_{2} O_{3}$	1030 1930 2720	QS	1.73 μs 3.1 μs 4.47 μs	6 12 6	[27]
BP quartz plate	$Nd : {YVO}_{4}$	1064	ML	6.1 ps	460	[32]
BP solution SA	$Nd : {YVO}_{4}$	1064	QS	119 ns	1230	Our work