Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators

Yao-Peng Zhao; Chong Wang; Xue-Feng Zheng; Xiao-Hua Ma; Kai Liu; Ang Li; Yun-Long He; Yue Hao

doi:10.1088/1674-1056/ab8daa

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