Yao-Peng Zhao, Chong Wang, Xue-Feng Zheng, Xiao-Hua Ma, Kai Liu, Ang Li, Yun-Long He, Yue Hao. Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators[J]. Chinese Physics B, 2020, 29(8):
- Chinese Physics B
- Vol. 29, Issue 8, (2020)
Fig. 1. Schematic cross-sectional structure of AlGaN/GaN gate-recessed MIS-HEMT.
Fig. 2. Photomicrograph of (a) MIS-HEMT device and (b) FIB cross-sectional view of gate area.
Fig. 3. Energy band diagram of AlGaN/GaN gate-recessed MIS-HEMT.
Fig. 4. Molecular structure diagram of HfO2/AlGaN and Al2O3/AlGaN interfaces.
Fig. 5. Curves of dielectric layer breakdown voltage of devices.
Fig. 6. Curves of transfer characteristics of recessed MIS-HEMT with (a) 6-nm-thick barrier, (b) 3-nm-thick barrier, and (c) 0-nm-thick barrier, and (d) change trend comparison chart of V th and G m.
Fig. 7. The C –V curves of gate-recessed MIS-HEMT.
Fig. 8. Plots of drift mobility versus gate voltage V g of electron for HfO2 and Al2O3 barriers with different thickness values.
Fig. 9. Pulsed output current curves of devices.
Fig. 10. Comparisons of change trend of R on and current collapse betwen HfO2 and Al2O3 MIS-HEMTs at maximum gate voltage.
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