• Optoelectronics Letters
  • Vol. 14, Issue 5, 363 (2018)
Yang LIU1, Wei LIU1、*, Meng-xin CHEN2, Si-han SHI1, Zhi-chao HE1, Jin-long GONG2, Tuo WANG2, Zhi-qiang ZHOU1, Fang-fang LIU1, Yun SUN1, and Shu XU3
Author Affiliations
  • 1Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
  • 2Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China
  • 3Davidson School of Chemical Engineering, Purdue University, West Lafayette IN47907, USA
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    DOI: 10.1007/s11801-018-8036-7 Cite this Article
    LIU Yang, LIU Wei, CHEN Meng-xin, SHI Si-han, HE Zhi-chao, GONG Jin-long, WANG Tuo, ZHOU Zhi-qiang, LIU Fang-fang, SUN Yun, XU Shu. The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells[J]. Optoelectronics Letters, 2018, 14(5): 363 Copy Citation Text show less
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    LIU Yang, LIU Wei, CHEN Meng-xin, SHI Si-han, HE Zhi-chao, GONG Jin-long, WANG Tuo, ZHOU Zhi-qiang, LIU Fang-fang, SUN Yun, XU Shu. The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells[J]. Optoelectronics Letters, 2018, 14(5): 363
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