• Laser & Optoelectronics Progress
  • Vol. 56, Issue 19, 191401 (2019)
Bolun Chen and Xiaohui Fang*
Author Affiliations
  • School of Physics & Electronic Engineering, Guangzhou University, Guangzhou, Guangdong 510006, China
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    DOI: 10.3788/LOP56.191401 Cite this Article Set citation alerts
    Bolun Chen, Xiaohui Fang. Influence of Output Mirror Transmittance on Semiconductor Saturable Absorber Mirror Mode-Locked Laser[J]. Laser & Optoelectronics Progress, 2019, 56(19): 191401 Copy Citation Text show less

    Abstract

    This study focuses on the output characteristics of an 808-nm laser diode (LD) end-pumped Nd∶YVO4 mode-locked laser with a semiconductor saturable absorber mirror (SESAM). Further, a mode-locked laser with variable output power is designed by the selection of the output mirror transmittance. First, the influence of the output mirror transmittance on the laser mode-locked power and threshold is systematically studied. An output mirror transmittance of 10% and a pumping power of 8 W result in the highest output power of 2.58 W that corresponds to a conversion efficiency of 32.3%, whereas an output mirror transmittance of 0.1% results in a low continuous-wave mode-locked threshold of 1 W and an output power of 0.58 mW. Second, the mode-locked pulse width is measured by using a home-made autocorrelator; the parasitic oscillations of the laser are analyzed based on the autocorrelation traces. Thus, we obtain mode-locked pulses with a pulse width of 13 ps at a repetition rate of 150 MHz by optimizing the output mirror to suppress the parasitic oscillations.
    Bolun Chen, Xiaohui Fang. Influence of Output Mirror Transmittance on Semiconductor Saturable Absorber Mirror Mode-Locked Laser[J]. Laser & Optoelectronics Progress, 2019, 56(19): 191401
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