0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit

NIU Bin; CHENG Wei; ZHANG You-Tao; WANG Yuan; LU Hai-Yan; CHANG Long; XIE Jun-Ling

doi:10.11972/j.issn.1001-9014.2016.03.002

[1] Monier C. ,Scott D. ,D’Amore M., et al., "High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications[C].Electron Device Meeting. 2007, 671.

[2] Urteaga M. Pierson M, R.Rowel, P. l, et al. 130nm InP DHBTs with ft >0.52THz and fmax >1.1 THz[C]. 2011 Device Research Conference (DRC), 2011 69th Annual 2011:281.

[3] D'Amore M. ,Monie C. Lin r, S. et al.A 0.25μm InP DHBT 200GHz+ Static Frequency Divider[J]. IEEE Compound Semiconductor Integrated Circuit Symposium 2009,1.

[4] Griffith Z. ,Urteaga M. ,Pierson R., et al.A 204.8GHz Static Divide-by-8 Frequency Divider in 250nm InP HBT[J]. IEEE Compound Semiconductor Integrated Circuit Symposium2010, 1.

[5] Niu B. ,Wang Y. ,Chen W., et al.Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz[J].Chin. Phys. Lett.2015，32:077304 .

[6] Zhang Y. ,Li X. ,Zhang M., et al.A 83 GHz InP DHBT Static Frequency Divider[J].Journal of Semiconductors2014，35: 045004.

[7] Cheng W. ,Jin Z. Yu, J. et al.Design of InGaAsP Composite Collector for InP DHBT[J]. Chinese Journal of Semiconductors 2007,28:943.

[8] Griffith Z., "Ultra High Speed InGaAs/InP DHBT Devices and Circuits", PhD. Thesis 2005.

[9] Ge J, Jin Z, Su Y, et al.A Physical-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect[J]. Chin. Phys. Lett. 26, 077302 (2009).

[10] Evan L., "Scaling Mesa InP DHBTs to Record Bandwidths[J].PhD. Thesis 2011.

[11] Griffith Z, Dahlstrom M, Rodwel lM J W, et al.Ultra High Frequency Static Frequency Static Dividers > 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology[C].Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meetings, 2004, 176.