• Journal of Infrared and Millimeter Waves
  • Vol. 35, Issue 3, 263 (2016)
NIU Bin*, CHENG Wei, ZHANG You-Tao, WANG Yuan, LU Hai-Yan, CHANG Long, and XIE Jun-Ling
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2016.03.002 Cite this Article
    NIU Bin, CHENG Wei, ZHANG You-Tao, WANG Yuan, LU Hai-Yan, CHANG Long, XIE Jun-Ling. 0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit[J]. Journal of Infrared and Millimeter Waves, 2016, 35(3): 263 Copy Citation Text show less

    Abstract

    0.5μm InP/InGaAs DHBT with 350/533 GHz ft/fmax and two layers of interconnecting technology were developed for ultra high speed digital integrated circuit (IC) application. A static divide-by-2 frequency divider operating at 100 GHz was demonstrated. As the important parameters of gate delay, base-collector capacitance Ccb and Ccb/IC were analyzed. The value of Ccb/IC as low as 0.4 ps/V was achieved, indicating that frequency divider operating above 150 GHz could be potentially realized.
    NIU Bin, CHENG Wei, ZHANG You-Tao, WANG Yuan, LU Hai-Yan, CHANG Long, XIE Jun-Ling. 0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit[J]. Journal of Infrared and Millimeter Waves, 2016, 35(3): 263
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