Ping Zou, Dan Lü, Gui-Ying Xu. Microstructure and thermoelectric property of (Bi1–xTbx)2(Te0.9Se0.1)3 fabricated by high pressure sintering technique [J]. Acta Physica Sinica, 2020, 69(5): 057201-1
- Acta Physica Sinica
- Vol. 69, Issue 5, 057201-1 (2020)
Fig. 1. XRD patterns of the (Bi1–x Tbx )2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008) HPS samples.
Fig. 2. FE-SEM of the (Bi1–x Tbx )2(Te0.9Se0.1)3 HPS sample (x = 0.004).
Fig. 3. The temperature dependences of electrical conducti-vities for the HPS samples doped with different Tb contents.
Fig. 4. The temperature dependence of Seebeck coefficient for the HPS samples doped with different Tb contents.
Fig. 5. Temperature dependence of power factor for the HPS samples doped with different Tb contents.
Fig. 6. Temperature dependence of thermal conductivities for the HPS samples: (a) Tb-free sample (x = 0); (b)Tb-doped sample (x = 0.004).
Fig. 7. Temperature dependence of the figure of merit ZT for the Tb-free HPS sample and Tb-doped HPS sample with x = 0.004.
Fig. 8. Temperature dependence of electrical conductivity for the annealed samples doped with different Tb contents.
Fig. 9. Temperature dependence of Seebeck coefficient for the annealed samples doped with different Tb contents.
Fig. 10. Temperature dependence of power factor for the annealed samples doped with different Tb contents.
Fig. 11. Temperature dependence of thermal conductivity for the annealed sample with x = 0.004.
Fig. 12. Temperature dependence of the figure of merit ZT for the Tb-free annealed sample and Tb-doped annealed sample with x = 0.004.
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Table 1.
Lattice constants of (Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008).
(Bi1–xTbx)2(Te0.9Se0.1)3 (x = 0, 0.002, 0.004, 0.008)样品的晶格常数
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Table 2.
Carrier concentrations and mobility of (Bi1–xTbx)2(Te0.9Se0.1)3samples.
(Bi1–xTbx)2(Te0.9Se0.1)3样品的载流子浓度和迁移率
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