[1] V. Mikhelashvili, G. Eisenstein, F. Edelmann. Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon[J]. J.Appl. Phys.,2001,90(10):5447～5449

[2] Mikhelashvili V., Eisenstein G., Edlman F.. Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films[J]. Appl. Phys., 2004, 80(12):2156～2158

[3] M. P. Singh, C. S. Thakur, K. Shalini et al.. Structural and electrical characterization of erbium oxide films grown on Si.100. by low-pressure metalorganic chemical vapor deposition[J].Appl. Phys. Lett.,2003, 83(14):2889～2891

[4] M. Miritello, R. Lo Savio, A.M. Piro et al.. Optical and structural properties of Er2O3 films grown by magnetron sputtering[J]. J.Appl. Phys., 2006,100(1)：013502.

[5] Wenxiu Que, Y. Zhou, Y. L. Lam et al.. Photoluminescence of erbium oxide nanocrystals/TiO2/γ-glycidoxypropyltrimethoxysilane (GLYMO) composite sol-gel thin films derived at low temperature[J]. J. Appl. Phys., 2001,89(5):3058～3060

[6] Wu Bo, Liu Yongzhi, Zhang Qianshu et al.. High efficient narrow linewidth fiber laser based on fiber grating fabry-perot cavity[J].Chinese J. Lasers,2007,34(3):350～353

[7] Wang Pinghe, Liao Xian, Rao Yunjiang. A novel self-exciting brillouin erbium-doped fiber laser[J].Acta Optica Sinica,2007,27(12):2200～2204

[8] E.V. Vanin, A.M. Grishinb, S.I. Khartsev et al..Broadband photoluminescence from pulsed laser deposited Er2O3 films[J]. Journal of Luminescence, 2006,121:256～258

[9] V.A. Rozhkov, M.A. Rodionov, Antireflection properties of erbium oxide films[J]. Tech. Phys. Lett., 2005, 31(1): 77～78

[10] K.M. Hubbard, B.F. Espinoza, Corrosion-resistant erbium oxide coatings by organometallic chemical vapor deposition[J]. Thin Solid Films, 2000, 366(1～2)：175～180

[11] S. Chen, Y.Y. Zhu, R. Xu et al.. Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates[J]. Appl. Phys. Lett., 2006,89(22): 222902-1～222902-3

[12] V. Mikhelashvili, G. Eisenstein, F. Edelmann et al.. Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin films[J]. Appl. Phys. Lett., 2002,95(2):613～620

[13] M.P. Singh, C.S. Thakur, K. Shalini et al.. Structural and electrical characterization of erbium oxide films grown on Si.100. by low-pressure metalorganic chemical vapor deposition[J].Appl. Phys. Lett., 2003,83(14): 2889～2891

[14] J. Paivasaari, J. Niinisto, K. Arstila et al.. High growth rate of erbium oxide thin films in atomic layer deposition from (CpMe)3 Er and water precursors[J]. Chem. Vapor. Depos., 2005, 11(10)：415～419

[15] Azzam N. M. A., Bashara N. M.. Ellipsometry and Polarized Light[M]. North-Holland publishing Co., 1977

[16] Maria M. Giangregorio, Alberto Sacchetti, Maria Losurdo et al.. Correlation between structure and properties of Er2O3 nanocrystalline thin films[J]. Journal of Non-Crystalline Solids, 2008, 354(19～25)： 2853～2857

[17] V. Mikhelashvili, G. Eisenstein, F. Edelman et al.. Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin films[J]. J. Appl. Phys., 2004, 95(2)：613～620

[18] O. Medenbach, D. Dettmar, R. D. Shannon et al.. Refractive index and optical dispersion of rare earth oxides using a small-prism technique[J]. J. Opt. A, Pure Appl. Opt., 2001, 3(3)： 174～177

[19] Liu Enke, Zhu Bingsheng, Luo Jinsheng. Semiconductor Physics[M].Beijing:Publishing House Of Electronics Industry(Edition 7), 2008,319