[1] MEDERER F, JAGER R, SCHNITZER P, et al. Multi-Gb/s graded-index POF data link with butt-coupled single-mode InGaAs VCSEL[J]. IEEE Photonics Technology Letters, 2000, 12(2):199—201.

[2] IGA K.Vertical-Cavity Surface-emitting laser:Its Conception and Evolution[J]. Japan.J.Appl. Phys, 2008, 47(1):1—10.

[3] JAGER R, GRABHERR M, JUNG C, et al. 57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs[J]. Electronics Letters, 1997, 33(4):330—331.

[4] AMANN M C, ORTSIEFER M, SHAU R, et al. Vertical-Cavity Surface-Emitting Laser Diodes for Telecommunication Wavelengths [C].Proceedings of SPIE, 2002, 4871:123—129.

[5] UEKI N, NAKAYAMA H, SAKURAI J, et al. Complete polarization control of 12×8-bit matrix-addressed oxide-confined vertical-cavity surface-emitting laser array[J]. Japan. J. Appl. Phys.2001, 40:L33—L35.

[6] WU Jian, IORDACHE G, SUMMERS H D, et al. Optical characterstics of VCSEL pumped microchip lasers[J]. Optics Communications, 2001, 196:251—256.

[8] SEURIN J F, GHOSH C L, KHALFIN V, et al. High-power high-efficiency 2D VCSEL arrays[C]. Proceedings of SPIE, 2008, 6908(08):1—14.

[9] HARDLEY G R, LEAR K L, WARREN M E, et al. Comprehensive numerical modeling of vertical-cavity surface-emitting lasers[J]. IEEE Journal of Quantum Electronics, 1996, 32(4):607—616.

[10] ANGELOS C, HINCKLEY S, MICHALZIK R, et al. Simulation of Current Spreading in Bottom-Emitting Vertical Cavity Surface Emitting Lasers for High Power Operation[C], Proceedings of SPIE, 2004, 5277:261—272.1001-9014(2010)05-0362-05