Nai-Zhang Liu, Xue-Bing Zhang, Ruo-He Yao. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances [J]. Acta Physica Sinica, 2020, 69(7): 077302-1
- Acta Physica Sinica
- Vol. 69, Issue 7, 077302-1 (2020)
Fig. 1. Schematic of GaN HEMT outer fringing capacitances in different state: (a) In the OFF-state; (b) in the ON-state.
Fig. 2. Schematic of normal electric field between the side wall of the gate and the 2DEG.
Fig. 3. (a) Electric field lines after transforming the nonconfocal elliptical system to the confocal system; (b) the confocal system with L cd = L d.
Fig. 4. Error in the confocal system with L cd = L d.
Fig. 5. C ofd versus the extended depletion length induced by donor-like surface traps.
Fig. 6. The curve of the density n s of 2DEG and E f versus V g
Fig. 7. The curve of V dsat versus V g.
Fig. 8. The curve of C ofd versus V ds obtained from the traditional model and the model in this paper.
Fig. 9. The curve ofC ofd versus V th(The illustration show the curve of V th with Al component and doped concentration).
Fig. 10. The curve of C ofd versus T
Fig. 11. The curve oftemperature sensitivity of C ofd under different drain bias.
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Table 1. Model parameters in this paper.
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