Nai-Zhang Liu, Xue-Bing Zhang, Ruo-He Yao. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances [J]. Acta Physica Sinica, 2020, 69(7): 077302-1
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- Acta Physica Sinica
- Vol. 69, Issue 7, 077302-1 (2020)
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