Research on Crystal Growth and Passively Q-switching of Cr4+:YAG

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 1 >Page 26 > Article

Chinese Journal of Quantum Electronics
Vol. 20, Issue 1, 26 (2003)

Research on Crystal Growth and Passively Q-switching of Cr4+:YAG

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research on Crystal Growth and Passively Q-switching of Cr4+:YAG[J]. Chinese Journal of Quantum Electronics, 2003, 20(1): 26 Copy Citation Text

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Abstract

We grew Cr4+:YAG crystal with high optical quality by Czochralski method using divalent Ca ions as charge compensation ions. Furthermore, we also annealed the as-grown crystal in air at 1450℃ for 50 hours. Absorption spectra show that the content of Cr4+ ions and absorption coefficient at 1.06μm in Cr4+:YAG crystal annealed increase remarkably. In addition, we also researched Q-switching experiments of lamp pump Nd:YAG laser using Cr4+:YAG crystal with different thickness as absorbers. The results indicate that grown Cr4+:YAG crystal can Q-switch effectively Nd:YAG laser.

Keywords

annealing Cr4+:YAG crystal growth lamp pumped Nd:YAG laser passively Q-switching

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