[1] J T Torvik, J I Pankove, B Van Zeghbroeck. GaN/SiC heterojunction bipolar transistor[J]. Solid-State Electronics, 2000, 44(7): 1229-1233.

[2] Xiong Yijing, Zhang Meng, Xiong Chuanbing, et al.. Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si(111)[J]. Chinese J Luminescence, 2010, 31(4): 533-537.

[3] Li Lianbi, Chen Zhiming. Influence of growth temperature on photoluminescence of thin SiCGe films on 6H-SiC[J]. Chinese J Luminescence, 2010, 31(3): 373-377.

[4] Jianjun Tang, Ting Liang, Weili Shi, et al.. The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy[J]. Appl Surf Sci, 2011, 257(21): 8846-8849.

[5] Qiao Guanru. Semiconductor Technology Principles of Chemical Engineering[M]. Nanjing: Jiangsu Science and Technology Publishing House, 1979. 57.

[6] Tae SuOh, Ah Hyun Park, Hyun Jeong, et al.. Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition[J]. J Alloys and Compounds, 2011, 509(6): 2952-2956.

[7] Lü Jianguo, Wang Chengbiao, Yu Xiang, et al.. Analysis on lattice mismatch stress on films[J]. Science and Technology Innovation Herald, 2008, 20: 14-15.

[8] Yin Jiayun, Liu Bo, Zhang Sen, et al.. Stress analysis of GaN materials grown on Si(111) substrates[J]. Micronanoelectronic Technology, 2008, (12): 703-705.

[9] L B Freund, S Suresh. Thin Film Materials: Stress, Formation of Defect and Evolution of the Surface[M]. Lu Lei, Tao Nairong, Zhang Guangping et al. Transl.. Beijing:Science Press, 2007. 49.

[10] Shao Shuying, Fan Zhengxiu, Fan Ruiying, et al.. A review of study of stress in thin films[J]. Laser & Optoelectronics Progress, 2005, 42(1): 22-27.

[11] Xiao Qiling, Shao Shuying, Shao Jianda, et al.. Influences of oxygen partial pressure and deposition rate on residual stress of YSZ thin films[J]. Chinese J Lasers, 2009, 36(5): 1195-1199.

[12] Jiang Zhao, Chen Xuegeng. Stress release and control of thin films materials used in devices fabrication[J]. J Vacuum Science and Technology, 2008, 28(5):17-21.

[13] Zhang Yaoping, Zhang Yundong, Ling Ning, et al.. Finite element analysis based on the residual stress of thin film[J]. Chinese J Lasers, 2005, 42(10): 23-26.

[14] A Paul, P K Chael, K R Avijit. Film-stress-induce deformation of EUV reflective optics[C]. SPIE, 1999, 3676: 724-733.

[15] Lei Zhang, Yongliang Shao, Xiaopeng Hao, et al.. Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3, and MOCVD-GaN/SiC samples by HVPE growth[J]. J Crystal Growth, 2011, 334: 62-66.