Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 18 >Issue 2 >Page 175 > Article

Chinese Journal of Quantum Electronics
Vol. 18, Issue 2, 175 (2001)

Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP

[in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 175 Copy Citation Text

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Abstract

The dynamicalcharacteristics of the gas flow in Turbo-Disk LP-MOCVD chamber is analysed. The dynamicalpressure model of suppressing In desorption during InGaAlP epitaxial layer grown byLP-MOCVD at high growth temperature around 700 ℃ is presented. The effects of the growth parameters such asthe disk speed and the reaction pressure on In composition in InGaAlP epitaxial layers areexplained based on our model.

Keywords

In composition InGaAlP LP-MOCVD the dynamical pressure

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 175

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