• Chinese Journal of Quantum Electronics
  • Vol. 35, Issue 6, 747 (2018)
Jinfeng ZHANG1、* and Teng LI2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3969/j.issn.1007-5461. 2018.06.016 Cite this Article
    ZHANG Jinfeng, LI Teng. Effect of band bending on exciton in a finite-barries quantum well[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 747 Copy Citation Text show less
    References

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    [4] Jiang Desheng. Excitonic effects in sem iconductors and their applications in opto-electronic devices [J]. Physics, 2005, 34(7): 521-527.

    [11] Ferekides C S, Mamazza R, Balasubramanian U, et al. Transparent conductors and buffer layers for CdTe solar cells [J]. Thin Solid Films, 2005, 480(3): 224-229.

    [15] Frenkel J. On the transformation of light into heat in solids [J]. Physical Review Journals Archive, 1931, 37(1): 17-44.

    [16] Bastard G, Mendez E E, Chang L L, et al. Exciton binding energy in quantum wells [J]. Physical Review B, 1982, 2(4): 1974-1979.

    [20] Wang Hailong, Jing Liming, Gong Qian, et al. The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot [J]. Physica B, 2009, 404(1): 122-126.

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    ZHANG Jinfeng, LI Teng. Effect of band bending on exciton in a finite-barries quantum well[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 747
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