[1] J. C. Campbell. Recent advances in avalanche photodiodes. J. Lightwave Technol., 34, 278-285(2016).

[2] R. J. McIntyre. Multiplication noise in uniform avalanche photodiodes. IEEE Trans. Electron. Devices, ED-13, 164-168(1966).

[3] R. B. Emmons. Avalanche‐photodiode frequency response. J. Appl. Phys., 38, 3705-3714(1967).

[4] M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, J. C. Campbell. Low-noise AlInAsSb avalanche photodiode. Appl. Phys. Lett., 108, 081102(2016).

[5] M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, J. C. Campbell. AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes. Appl. Phys. Lett., 108, 191108(2016).

[6] M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, J. C. Campbell. Low excess noise Al_xIn_1-xAs_ySb_1-y (x: 0.3–0.7) avalanche photodiodes. Conference on Lasers and Electro-Optics (CLEO), STh1G.1(2016).

[7] A. K. Rockwell, Y. Yuan, A. H. Jones, S. D. March, S. R. Bank, J. C. Campbell. Al_0.8In_0.2As_0.23Sb_0.77 avalanche photodiodes. IEEE Photon. Technol. Lett., 30, 1048-1051(2018).

[8] C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, A. L. Holmes, B. G. Streetman. Thin multiplication region InAlAs homojunction avalanche photodiodes. Appl. Phys. Lett., 73, 783-784(1998).

[9] Y. L. Goh, A. R. J. Marshall, D. J. Massey, J. S. Ng, C. H. Tan, M. Hopkinson, J. P. R. David, S. K. Jones, C. C. Button, S. M. Pinches. Excess avalanche noise in In_0.52Al_0.48As. IEEE J. Quantum Electron., 43, 503-507(2007).

[10] N. Li, R. Sidhu, X. Li, F. Ma, X. Zheng, S. Wang, G. Karve, S. Demiguel, A. L. Holmes, J. C. Campbell. InGaAs/InAlAs avalanche photodiode with undepleted absorber. Appl. Phys. Lett., 82, 2175-2177(2003).

[11] F. Capasso, R. E. Nahory, M. A. Pollack, T. P. Pearsall. Observation of electronic band-structure effects on impact ionization by temperature tuning. Phys. Rev. Lett., 39, 723-726(1977).

[12] F. Osaka, T. Mikawa. Low‐temperature characteristics of electron ionization rates in (100)‐ and (111)‐oriented InP. J. Appl. Phys., 58, 4426-4430(1985).

[13] K. Taguchi, T. Torikai, Y. Sugimoto, K. Makita, H. Ishihara. Temperature dependence of impact ionization coefficients in InP. J. Appl. Phys., 59, 476-481(1986).

[14] D. J. Massey, J. P. R. David, G. J. Rees. Temperature dependence of impact ionization in submicrometer silicon devices. IEEE Trans. Electron. Dev., 53, 2328-2334(2006).

[15] S. J. Maddox, S. D. March, S. R. Bank. Broadly tunable AlInAsSb digital alloys grown on GaSb. Cryst. Growth Des., 16, 3582-3586(2016).

[16] X. G. Zheng. Long-wavelength, high-speed avalanche photodiodes and APD arrays(2004).

[17] Y. Tan, M. Povolotskyi, T. Kubis, T. B. Boykin, G. Klimeck. Transferable tight-binding model for strained group IV and III-V materials and heterostructures. Phys. Rev. B, 94, 045311(2016).

[18] X. G. Zheng, P. Yuan, X. Sun, G. S. Kinsey, A. L. Holmes, B. G. Streetman, J. C. Campbell. Temperature dependence of the ionization coefficients of Al_xGa_1-xAs. IEEE J. Quantum Electron., 36, 1168-1173(2000).

[19] C. N. Harrison, J. P. R. David, M. Hopkinson, G. J. Rees. Temperature dependence of avalanche multiplication in submicron Al_0.6Ga_0.4As diodes. J. Appl. Phys., 92, 7684-7686(2002).

[20] F. Capasso. Physics of avalanche photodiodes. Semicond. Semimetals, 22, 1-172(1985).