Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

Yuan Yuan; Jiyuan Zheng; Yaohua Tan; Yiwei Peng; Ann-Kathryn Rockwell; Seth R. Bank; Avik Ghosh; Joe C. Campbell

doi:10.1364/PRJ.6.000794

Journals >Photonics Research >Volume 6 >Issue 8 >Page 794 > Article

Photonics Research
Vol. 6, Issue 8, 794 (2018)

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

Yuan Yuan¹, Jiyuan Zheng¹, Yaohua Tan¹, Yiwei Peng¹, Ann-Kathryn Rockwell², Seth R. Bank², Avik Ghosh¹, and Joe C. Campbell^1、*

Author Affiliations

¹Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA

²Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA

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DOI: 10.1364/PRJ.6.000794 Cite this Article Set citation alerts

Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik Ghosh, Joe C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys[J]. Photonics Research, 2018, 6(8): 794 Copy Citation Text

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Abstract

Digital alloy

{In}_{0.52} {Al}_{0.48} As

avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of

{In}_{0.52} {Al}_{0.48} As

and

{Al}_{0.74} {Ga}_{0.26} As

digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.

Keywords

Avalanche photodiodes (APDs)Ionization Photodiodes Temperature