The research progress of fabrication and application of doping black silicon via femtosecond laser irradiation is reviewed. The formation mechanism of micro-nano structures of silicon surfaces and impurity band in black silicon is introduced, and the influence factors in fabrication process of black silicon is analyzed, elaborating that super saturated doping can be realized by introducing chalcogen dopant (sulfur, selenium, tellurium) in the background gas, liquid, solid thin film environments, or ion-implantation followed by irradiation with femtosecond laser. Some problems demanded to be solved are suggested, and the application prospects of doping black silicon are predicted.