• Laser & Optoelectronics Progress
  • Vol. 52, Issue 4, 41404 (2015)
Liu Xia1、2、*, Li Te1, Lu Guoguang2, and Hao Mingming2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop52.041404 Cite this Article Set citation alerts
    Liu Xia, Li Te, Lu Guoguang, Hao Mingming. Research on Electric Derivatives and Reliability of Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2015, 52(4): 41404 Copy Citation Text show less
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    [2] Lu Guoguang, Tao Getao, Yao Shun, et al.. Accelerated aging of 808 nm high- power semiconductor laser diodes [J]. Semiconductor Optoelectronics, 2005, 26(2): 97-99.

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    [9] Qi Liyun, Shi Jiawei, Li Hongyan, et al.. The peaks in the electric derivative curves and optic derivative curves of GaAs/GaAlAs high-power QW lasers [J]. Microelectronics Reliability, 2000, 40(12): 2123-2128.

    [10] Cao Junsheng. Research on Non-destructive Test for Semiconductor Lasers and Laser Arrays [D]. Jilin: Jilin University, 2007.

    [11] Li Hongyan, Shi Jiawei, Jin Enshun, et al.. Screening of visible semiconductor lasers by electrical derivative technique [J]. Semiconductor Optoelectronics, 2000, 21(2): 115-117.

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    Liu Xia, Li Te, Lu Guoguang, Hao Mingming. Research on Electric Derivatives and Reliability of Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2015, 52(4): 41404
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