Analysis of laser-induced damage mechanism in Si photodiode based on parameter extraction of equivalent circuit

Shi Yubin; Zhang Jianmin; Zhang Zhen; Lin Xinwei; Cheng Deyan; Dou Pengcheng

doi:10.3788/irla201847.0106002

[1] Moeglin J P, Gautier B, Joecklé R, et al. Electrical behaviour of laser-damaged silicon photodiodes[J]. Optics & Lasers in Engineering, 1997, 28(5): 317-330.

[2] Sheng Liang, Zhang Jianmin, Zhang Zhen. Pixel upset effect and mechanism of CW laser irradiated CMOS cameras[J]. Infrared and Laser Engineering, 2016, 45(6): 39-42. (in Chinese)

[3] Zhu Zhiwu, Zhang Zhen, Cheng Xiang′ai. Damage phenomenon and probability of CCD detectors under single-laser-pulse irradiation[J]. Infrared and Laser Engineering, 2013, 42(1): 113-118. (in Chinese)

[4] Nie Jinsong, Wang Xi, Li Hua, et al. Thermal and mechanical damage in CCD detector induced by 1.06 μm laser[J]. Infrared and Laser Engineering, 2013, 42(s2): 380-386. (in Chinese)

[5] Zhang Zhen, Zhou Menglian, Zhang Jianming. Shadows of laser spots in CCD and their mechanism[J]. Optics and Precision Engineering, 2013, 21(5): 1365-1371. (in Chinese)

[6] Marquardt C L, Giuliani J F, Fraser F W. Observation of impurity migration in laser-damaged junction devices[J]. Radiation Effects, 1974, 23(2): 135-139.

[7] Giuliani J F, Marquardt C L. Electrical effects in laser-damaged phototransistors[J]. Journal of Applied Physics, 1974, 45(11): 4993-4996.

[8] Kruer M, Esterowitz L, Bartoli F, et al. Thermal analysis of laser damage in thin-film photoconductors[J]. Journal of Applied Physics, 1976, 47(7): 2867-2874.

[9] Kruer M, Allen R, Esterowitz L, et al. Laser damage in silicon photodiodes[J]. Optical and Quantum Electronics, 1976, 8(5): 453-458.

[10] Xu L, Cai H, Li C, et al. Degradation of responsivity for photodiodes under intense laser irradiation[J]. Optik, 2013, 124: 225-228.

[11] Moeglin J P, Gautier B, Joeckle R C, et al. Photoelectric performance degradation of several laser-irradiated Si detectors[C]//SPIE, Optoelectronics and High-Power Lasers & Applications, 1998, 3287: 60-66.

[12] Podlipskas S, Aleksiejūnas R, Nargelas S, et al. Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers[J]. Current Applied Physics, 2016, 16(6): 633-637.

[13] Bouzidi K, Chegaar M, Bouhemadou A. Solar cells parameters evaluation considering the seriesand shunt resistance[J]. Solar Energy Materials & Solar Cells, 2007, 91(18): 1647-1651.

[14] Chegaar M, Azzouzi G, Mialhe P. Simple parameter extraction method for illuminated solar cells[J]. Solid-State Electronics, 2006, 50(7): 1234-1237.

[15] Erees Queen B. Macabebe C J S E. Parameter extraction from I-V characteristics of PV devices[J]. Solar Energy, 2011, 85(1): 12-18.

[16] Lee M K, Wang J C, Horng S F, et al. Extraction of solar cell series resistance without presumed current–voltage functional form[J]. Solar Energy Materials & Solar Cells, 2010, 94(3): 578-582.

[17] Xiong Shaozhen, Zhu Meifang. The Principle and Application of Solar Cells[M]. Beijing: Science Press, 2009. (in Chinese)

[18] Jiang Tian, Cheng Xiang′ai, Xu Zhongjie, et al. Generation mechanism of two different over-saturation phenomena of photovoltaic HgCdTe detectors irradiated by CW band-in laser [J]. Acta Physica Sinica, 2013, 62(9): 097303.

[19] Ye Meiying, Wang Xiaodong, Xu Yousheng. Parameter extraction of solar cells using particle swarm optimization[J]. Journal of Applied Physics, 2009, 105(9): 094502.

[20] Liu Enke, Zhu Bingsheng, Luo Jingsheng. Semiconductor Physics[M]. Beijing: National Defend Industry Press, 1994. (in Chinese)

[21] Li Zewen. Research on the damage mechanisms of silicon and silicon-based photodetecotors irradiated by millisecond laser[D]. Nanjing: Nanjing University of Science & Technology, 2015. (in Chinese)

[22] Sun Tao. Surface leakage current mechanism and passivation of Hg1-xCdxTe photovoltaic detectors [J]. Infrared, 2004, 17(2): 17-24. (in Chinese)