[1] Allen G A.Calculations on the performance of GaAs photocathodes,Acta Electronica,1973,16(3): 229—236
[2] Rodway D C.Allenson M B.In situ surface study of the activating layer on GaAs(Cs,O) photocathodes,J.Phys.D:Appl.Phys.,1986,19(7): 1353—1371
[3] Yao M M. The state of Cs on negative electron affinity surfaces,Applied Surface Science,1988,33/34: 364
[4] GUO Tai-Liang,GAO Huai-Rong. Photoemission stability of negative electron affinity GaAs photocathodes,SPIE,1993,1982: 127—131
[6] Naoi Y, Ito K,Ueharo Y,et al. Very high resolution photoelectron spectra of NEA GaAs, Surface Science,1993,283(1/2): 457—461
[7] Bernard Goldstein, Daniel Szostak. Different bonding states of Cs and O on highly photoemissive GaAs by flashdesorption experiments,Applied Physics Letters,1975,26(3): 111—112
[8] Richard J C, Roaux E.Low light level imaging tube with GaAs photocathode,Vacuum,1980,30(11/12): 549—550