• Chinese Journal of Quantum Electronics
  • Vol. 24, Issue 1, 110 (2007)
Yi LIAO*, Jian-xin WANG, and Qin-yao ZHANG
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    LIAO Yi, WANG Jian-xin, ZHANG Qin-yao. Gamma radiation effects on MWIR HgCdTe FPA device[J]. Chinese Journal of Quantum Electronics, 2007, 24(1): 110 Copy Citation Text show less
    References

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    [8] Moriwaki M M,Suour J R,et al. Ionizing radiation effects on HgCdTe Mis devices [J].IEEE Trans. Nucl. Sci.,1990,37: 2034.

    [9] Waterman J R. Radiation induced interface trap limited storage times in 10 micron cutoff wavelength(Hg.Cd)Te Mis capacitors [J].IEEE Trans. Nucl. Sci.,1988,35: 1313.

    [10] Sarusi G,Eger D,et al. Degradation mechanisms of gamma irradiated LWIR HgCdTe phdtovoltaic detectors [J].IEEE Trans. Nucl. Sci.,1990,37: 2042.

    [11] Kalma A H,Cesena R A. Radiation testing of trimetal infrared detectors [J].IEEE Trans. Nucl. Sci.,1979,NS-26: 4833.

    LIAO Yi, WANG Jian-xin, ZHANG Qin-yao. Gamma radiation effects on MWIR HgCdTe FPA device[J]. Chinese Journal of Quantum Electronics, 2007, 24(1): 110
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