An arrayed waveguide grating based on SOI material was fabricated by inductive coupled plasma (ICP) etching technology. The central wavelength of the device was designed at 1.5509μm and the channel spacing was 200GHz. Comparing with the values of the design, the differences of the central wavelength and the channel spacing in the test were ~0.28nm and 0.02nm, respectively. The adjacent channel crosstalk was about 10dB, and the uniformity of the five channels’ insertion loss was only 0.7 dB. The results show that the device can be used as a demultiplexer.