Author Affiliations
1Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China;2University of Chinese Academy of Sciences, Beijing 100049, Chinashow less
Fig. 1. Crystal structure of BGSe and the coordination mode of cations. (a) Crystal structure of BGSe; (b) coordination mode of Ba2+
Fig. 2. Photographs of BGSe crystal grown by vertical Bridgeman-Stockbarger technique and BGSe devices
Fig. 3. IR transmittance spectrum of BGSe
Fig. 4. Schematic of BGSe-OPO
[27]. (a) Schematic of BGSe OPO in a linear cavity; (b) schematic of BGSe OPO in a ring cavity; (c) linear cavity output power versus incident pump power; (d) ring cavity OPO
M2 of signal light in the
x and
y directions
Fig. 5. Experimental device of MIR generation with BGSe crystal
[30] Fig. 6. OPO process of BGSe crystal and peak wavelength of idle frequency light at different temperatures
[31]. (a) Schematic of experimental setup; (b) peak wavelength of idler light of BGSe (56.3°,0°) at 30140°C
Validity range | n | A1 | A2 | A3 | A4 | A5 | Ref. |
---|
0.48-10.4 μm | nx | 7.410040 | 0.293340 | 0.051215 | 1265.119 | 1896.441 | [8] | ny | 7.323096 | 0.292889 | 0.052725 | 1182.324 | 1573.474 | nz | 7.764197 | 0.326812 | 0.069734 | 1297.079 | 1975.857 | 0.5-2.5 μm | nx | 5.952953 | 0.250172 | 0.081614 | 0.001709 | - | [11] | ny | 6.021794 | 0.256951 | 0.079191 | 0.001925 | - | nz | 6.293976 | 0.282648 | 0.094057 | 0.002579 | - | 2-11 μm | nx | 7.405114 | 0.225316 | 0.051215 | 1782.091 | 1170.528 | [9] | ny | 7.388458 | 0.224481 | 0.052725 | 1778.441 | 1238.145 | nz | 7.622884 | 0.238018 | 0.069734 | 1885.307 | 1303.370 | 0.901-10.591 μm | nx | 6.72431 | 0.26375 | 0.04248 | 602.97 | 749.87 | [10] | ny | 6.86603 | 0.26816 | 0.04259 | 682.97 | 781.78 | nz | 7.16709 | 0.32681 | 0.06973 | 731.86 | 790.16 |
|
Table 1. Fitting Sellmeier equations of
=
A1i+
A2i/(
λ2-
A3i)+
A4i/(
λ2-
A5i) in Refs. [
8-
10] and
=
A1i+
A2i/(
λ2-
A3i)-
A4iλ2 in Ref. [
11] for BGSe crystals, where
i=
x, y, and
z, and
λ is in μm
Validity ranges | dn/dT | B1 | B2 | B3 | B4 | Ref. |
---|
25-150 ℃ | dnx/dT | 0.6837 | 1.7607 | 1.6316 | 0.0318 | [12] | dny/dT | 0.2692 | 0.3112 | 0.2201 | 0.4867 | dnz/dT | 0.7223 | 1.5170 | 1.2953 | 0.1296 | 20-120 ℃ | dnx/dT | 0.60868 | 1.26368 | 1.05624 | 0.19583 | [13] | dny/dT | 0.63935 | 1.31762 | 1.08950 | 0.24079 | dnz/dT | 0.63141 | 1.30790 | 1.08486 | 0.20758 |
|
Table 2. Thermal-optical dispersion equation of dni/dT=(B1iλ-3-B2iλ-2+B3iλ-1+B4i)×10-4 (℃-1) for BGSe crystals, where i= x, y, and z, and λ is in μm
Tensor component | Theory: converted to xyz (assumption) | Maker fringes:converted to xyz | OPO laser experiment, in xyz | Phase-matched SHG, in xyz |
---|
d21=d16 | +5.2 | opposite sign to d23,d34 | comparable to d23;lager than d15;same sign to d23 | 5.3 ± 0.8 | d22 | +18.2 | ±24.3±1.5 | - | 6.2 ± 0.9 | d23=d34 | -20.6 | ±20.4±1.5 | - | -14.2±0.8 | d31=d15 | +14.3 | - | - | +2.0±0.3 | d32=d24 | -15.2 | - | - | -5.0±0.4 | d33 | -2.2 | - | - | - | Ref. | [7] | [14] | [16] | [15,17] |
|
Table 3. Nonlinear coefficients dij of BGSe, with all results rescaled to 532 nm, where dij is in pm/V
Test condition | Laser damage threshold | Ref. |
---|
Wavelength of light source /μm | Pulse width τ /ns | Beam diameter /mm | Repeat frequency frep /Hz | Fth /(J·cm-1) | Ith /(MW·cm-1) |
---|
1.064 | 5 | 0.4 | 1 | 2.8 | 557 | [19] | 2.09 | 27 | | 500 | 3.3 | 122.2 | [20] | 1.064 | 14 | ~4 | 100 | 1.4 | 100 | [16] | 1.053 | 16 | 0.2 | 100 | 2.04±0.39 | 254.6 | [21] | 150 | 2.02 ±0.31 | 252 | 200 | 1.81±0.25 | 225.6 | 1.053 | 7.2±0.4 | 0.15-0.16 | 100 | 2.30 | 319 | [22] | 8.3±0.5 | 500 | 1.75 | 211 | 10.0±0.3 | 1000 | 1.56 | 156 |
|
Table 4. Laser damage threshold measurements of BGSe
Type of experiment | Pump source | Output wavelength | Maximum input-output energy or power | Ref. |
---|
OPO | 1.064 μm, 10 ns, 10 Hz | 814 μm | 40 mJ@1 μm→1.05 mJ@11 μm | [25] | OPO | 1.064 μm, 11 ns, 20 Hz | 3.34.1 μm | 101.3 mJ@1 μm→21.5 mJ@3.8 μm | [24] | OPO | 2.09 μm, 16 ns, 1 kHz | 89 μm | 9.58 W@2.09 μm→0.314 W@8.93 μm | [26] | OPO | 2.09 μm, 28 ns, 1 kHz | 35 μm | 28 W@2 μm→ 5.1 W@4 μm | [27] | OPO | 1.064 μm, 10 ns, 10 Hz | 2.717 μm | 61 mJ@1 μm→3.7 mJ@7.2 μm | [16] | OPO | 2.79 μm, 21 ns, 10 Hz | 3.949.55 μm | 18 mJ@2.79 μm→3.5 mJ@5.03 μm | [28] | DFG | 850 nm, 50 kHz | 3.157.92 μm | 1.5 W@850 nm→1.41 μW@5 μm | [29] |
|
Table 5. Recent progress in laser frequency conversion experiment of BGSe crystal
Crystal | AGS | AGSe | CdSe | ZGP | BGSe |
---|
Nonlinear coefficient /(pm·V-1) | 13 | 33 | 18 | 72 | 31.5 | Laser damage threshold | Low | Low | Low | High | Very high | Pump source /μm* | 12 | 1.52 | 2 | 2 | 13 | Output wavelength range /μm* | 39 | 315 | 318 | 39 | 315 | Output line width /nm | 10 | 10 | 10 | 150 | 10 | Melting point /℃ | 993 | 860 | 1350 | 1025 | 1020 | Phase transition | No | No | Yes | No | No | Thermal conductivity /(W·m-1·K-1) | 1.5 | 1 | 6.5 | 36 | 0.7 | Electron beam irradiation | No | No | No | Yes | No | Ref. | [32] | [33] | [34] | [34] | [7] |
|
Table 6. Comparison of main properties between BGSe crystal and common infrared nonlinear optical crystals
Crystal | Type of experiment | Pump source / μm | Output wavelength / μm | Maximum output energy or power | Ref. |
---|
AGS | OPO | 1.064 | 2.355.27 | 21 mJ@1 μm→0.58 mJ@4 μm | [35] | AGS | DFG | 0.780 | 512.5 | 40 mW@0.780 μm→66 nW@8.06 μm | [36] | AGSe | OPO | 1.57 | 48 | 12 mW@1.57 μm→0.8 mW @4.11 μm | [37] | AGSe | DFG | 1.97 | 618 | 30 mJ@1.06 μm→0.34 mJ@9 μm | [38] | CdSe | OPO | 2.097 | 10.512 | 18.2W@2.097 μm→0.8 W@11 μm | [34] | ZGP | OPA | 2.097 | 35 | 120 W@2.097 μm→102 W@3.92 μm | [39] | ZGP | OPA | 2.097 | 4.38.3 | 116 W@2.097 μm→11.4 W@ 8.3 μm | [40] |
|
Table 7. Representative laser output results of commonly used infrared nonlinear optical crystals