Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

Jun Fang; Fan Zhang; Wenxian Yang; Aiqin Tian; Jianping Liu; Shulong Lu; Hui Yang

doi:10.1088/1674-4926/45/1/012503

Journals >Journal of Semiconductors >Volume 45 >Issue 1 >Page 012503 > Article

Journal of Semiconductors
Vol. 45, Issue 1, 012503 (2024)

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

Jun Fang^1、2, Fan Zhang², Wenxian Yang^2、*, Aiqin Tian², Jianping Liu², Shulong Lu², and Hui Yang^2、**

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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DOI: 10.1088/1674-4926/45/1/012503 Cite this Article

Jun Fang, Fan Zhang, Wenxian Yang, Aiqin Tian, Jianping Liu, Shulong Lu, Hui Yang. Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2024, 45(1): 012503 Copy Citation Text

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Fig. 1. (Color online) (a) Schematic diagram of the device structure including GaN/InGaN/GaN TJ. (b) Equivalent circuit diagram of the device.

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(Color online) XRD ω−2θ patterns of the three samples (a) S1 , (b) S2 , (c) S3. The black curve represents the experimental curve, while the red curve represents the simulation curve.

Fig. 2. (Color online) XRD

ω

−2θ patterns of the three samples (a) S₁, (b) S₂, (c) S₃. The black curve represents the experimental curve, while the red curve represents the simulation curve.

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Fig. 3. (Color online) Surface AFM images of the three samples (a) S_1, (b) S₂, (c) S₃.

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Fig. 4. HRTEM image of the tunnel junction.

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Fig. 5. (Color online) (a) I–V curves of the samples, the doping concentration at the TJ of the samples varies, and (b) the change of differential resistance at forward current density.

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Fig. 6. (Color online) (a) I–V curves of the samples, In content of the InGaN layer at the tunnel junction changes, (b) the change of differential resistance at forward current density.

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Fig. 7. (Color online) I–V curves of the samples, thickness of InGaN layer at tunnel junction varies.

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Fig. 8. (Color online) I–V curves of the samples, doping in InGaN layers at tunnel junctions changes.

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	p⁺⁺-GaN: 20 nm (10²⁰ cm⁻³)	Insert layer InGaN	n⁺⁺-GaN: 10 nm (10²⁰ cm⁻³)
Sample A	Mg: 1	p⁺⁺-In_0.1Ga_0.9N: 3 nmMg: 1 × 10²⁰ cm⁻³	Si: 0.5
Sample B	Mg: 1.2	p⁺⁺-In_0.1Ga_0.9N: 3 nmMg: 6 × 10²⁰ cm⁻³	Si: 1.5
Sample C	Mg: 1.2	p⁺⁺-In_0.25Ga_0.75N: 3 nmMg: 6 × 10²⁰ cm⁻³	Si: 1.5
Sample D	Mg: 1.2	p⁺⁺-In_0.35Ga_0.65N: 3 nmMg: 6 × 10²⁰ cm⁻³	Si: 1.5
Sample E	Mg: 1.2	No InGaN insert layerMg: 6 × 10²⁰ cm⁻³	Si: 1.5
Sample F	Mg: 1.2	Uid-In_0.35Ga_0.65N: 3 nm	Si: 1.5
Sample G	Mg: 1.2	Uid-In_0.35Ga_0.65N: 5 nm	Si: 1.5
Sample H	Mg: 1.2	n-In_0.35Ga_0.65N: 3 nmSi: 2 × 10¹⁹ cm⁻³	Si: 1.5

Table 1. The specific structural parameters of GaN/InGaN/GaN TJ.

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