Rapid synthesis of nanocrystalline Bi4Ti3O12 by chemical solution decomposition technique

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[1] Li W Z;Xie S S;et al.Large-scale synthesis of aligned carbon nanotubes Science;1996;274:1701

[2] Ajayan P M; Stephan O; Colliex C;et al.Aligned carbon nanotube arrays formed by cutting a polymer resin-nanotube composite.science;1994;265:1212

[3] Tsang S C; Chen Y K; Harris P J F;et al.;A simple chemical method of opening and filling carbon nanotubes.Nature;1994;372:159

[4] Lijima S. Helical microtubules of graphitic carbon;Nature;1991;354:56

[5] Mintmire J W; Dunlop B I; White C T. Are Fllerene Tubules Metallic Phys Rev.Lett.;1992;68:631

[6] Jiang A Q; Hu Z X; Zhang L D. The induced phase transformation and oxygen vacancy relaxation in La-modified bismuth titanate ceramics.Appl.Phys.Lett.;1999;74:114

[7] Haoshuang Gu;Anxiang Kuang;Shimin Wang;et al.;Synthesis and ferroelectic properties of C-axis oriented Bi4Ti3O12 thin films by Sol-Gel process on platinum coated silicon.Appl.Phys.Lett.;1996;68:1209

[8] Haoshuang-Gu Peizhi-Chen;Youhua-Zhou;et al.reactions in preparing Bi4Ti3O12 ultrafine powders by Sol-Gel process.Ferroelectrics;1998;211:271

[9] Wu S Y. A new ferroelectric memory device; metal-ferroelectric-semiconductor transistor.IEEE Trans.Electron Device;ED-21;1974:499

[10] Sugibuchi K; Kurogi Y;Endo N. Ferroelectric field-effect memory device using Bi4Ti3O12 film. J.Appl.Phys.;1975;46:2877

[11] Kalkur T S; Kulkrarni J; Lu Y C;et al.Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon.Ferroelecrtrics;1991;116:135

[12] Wang H; Fu L W; Shang S X. Preparation and properties of Bi4Ti3O12 single-crystal thin films by atmospheric pressure metalorganic chemical vapor deposition.J.Appl.Phys.;1993;73:7963

[13] Maffei N; Krupanidhi S K. Excimer laser-ablated bismuth titanate thin films.Appl.Phys.Lett.;1992;60:781

[14] Joshi P C; Mansingh A; Kamalasanan M N;et al.Structural and optical properties of ferroelectric Bi4Ti3O12 thin films by Sol-Gel technique.Appl.Phys.Lett.;1991;59:2389

[15] Tohge N; Fukuda Y; Minami T. Formation and properties of ferroelectric Bi4Ti3O12 films by the Sol-Gel process.Jpn.J.Appl.Phys.;1992;31:4016

[16] Wang S W; Wang H; Shang S X;et al.PZT thin films prepared by chemical solution decomposition method using Bi4Ti3O12 buffer layer.J.Crystal Growth;2000;217:388

[17] Wu X M; Wang S W; Wang H;et al.;Preparation and characterization of Bi4Ti3O12 thin films by chemical solution deposition technique.Thin Solid Films;2000;370:30

[18] Wang S W; Wang H; Wu X M;et al.Rapid thermal processing of Bi4Ti3O12 thin films grown by chemical solution decomposition.J.Crystal Growth;2001;224:323

[19] Wang S W; Wang H;Xu X H;et al.Pb(Zr;Ti)O3 thin films prepared on PbTiO3/Si(100) by chemical solution decomposition technique.Ferroelectrics;2001;252:225

[20] Wang H; Hou Y; Wang S W;et al.Bi3.25La0.75Ti3O12 thin films prepared on Si(100) by chemical solution decomposition method.The Sixth International Symposium on Ferroic Domains and Mesocopic Structures;Nanjing;China;May 29-June 02;2000

[21] Gu Haoshuang; Chao Dong; Chen Peizhi;et al.Growth of layered perovskite Bi4Ti3O12 thin films by Sol-Gel process.J.Crystal Growth;1998;186:403