• Chinese Optics Letters
  • Vol. 20, Issue 7, 073603 (2022)
Shu Zong, Dongwen Zeng, Wen Yuan, Guiqiang Liu*, and Zhengqi Liu**
Author Affiliations
  • Jiangxi Provincial Key Laboratory of Optoelectronic and Telecommunication, Jiangxi Key Laboratory of Nanomaterials and Sensors, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang 330022, China
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    DOI: 10.3788/COL202220.073603 Cite this Article Set citation alerts
    Shu Zong, Dongwen Zeng, Wen Yuan, Guiqiang Liu, Zhengqi Liu. Recent advances on perfect light absorbers and their promise for high-performance opto-electronic devices [Invited][J]. Chinese Optics Letters, 2022, 20(7): 073603 Copy Citation Text show less
    Schematic of the resonant FP cavity.
    Fig. 1. Schematic of the resonant FP cavity.
    (a) Schematic of the MoS2-based PA. (b) Simulated results of the monolayer MoS2-based PAs[34]. (c) Illustration of the WS2 MPAs and the unit cell. (d) Absorption and reflection spectra of the MPAs[35].
    Fig. 2. (a) Schematic of the MoS2-based PA. (b) Simulated results of the monolayer MoS2-based PAs[34]. (c) Illustration of the WS2 MPAs and the unit cell. (d) Absorption and reflection spectra of the MPAs[35].
    (a) Schematic of the graphene MPA and the unit cell. (b) Absorption, transmission, and reflection spectra of the graphene MPA[53].
    Fig. 3. (a) Schematic of the graphene MPA and the unit cell. (b) Absorption, transmission, and reflection spectra of the graphene MPA[53].
    (a) Schematic of the MLPA. (b) Reflection and absorption spectra of the structure. (c) Normalized electric field intensity distributions of the absorption peaks at λ1–λ4, respectively[54]. (d) Illustration of the MPAs. (e) The equivalent circuit model of the absorber[55].
    Fig. 4. (a) Schematic of the MLPA. (b) Reflection and absorption spectra of the structure. (c) Normalized electric field intensity distributions of the absorption peaks at λ1λ4, respectively[54]. (d) Illustration of the MPAs. (e) The equivalent circuit model of the absorber[55].
    (a) Schematic of broadband titanium nitride disordered MAs[100]. (b) Schematic of a nanostructured wideband light absorber prepared on top of a commercial thermoelectric device. (c) The extinction spectra of the flat film and two nanostructures with radius of r = 198 nm and 201 nm are measured in the visible and short-wave infrared regions. (d) Extinction spectra of the flat film, nanostructure, and nanostructure with surface roughness are simulated[105].
    Fig. 5. (a) Schematic of broadband titanium nitride disordered MAs[100]. (b) Schematic of a nanostructured wideband light absorber prepared on top of a commercial thermoelectric device. (c) The extinction spectra of the flat film and two nanostructures with radius of r = 198 nm and 201 nm are measured in the visible and short-wave infrared regions. (d) Extinction spectra of the flat film, nanostructure, and nanostructure with surface roughness are simulated[105].
    (a) Schematic of the absorber and the corresponding cross-section view. (b) The absorption spectra of the MA with optimized geometry[106]. (c) Schematic diagram of Al-ZnS multilayer sawtooth absorber and a single structural unit. (d) The absorption spectra of TM and TE polarized light incidence and hyperbolic metamaterials with TM polarized light incidence under effective medium theory are studied[77].
    Fig. 6. (a) Schematic of the absorber and the corresponding cross-section view. (b) The absorption spectra of the MA with optimized geometry[106]. (c) Schematic diagram of Al-ZnS multilayer sawtooth absorber and a single structural unit. (d) The absorption spectra of TM and TE polarized light incidence and hyperbolic metamaterials with TM polarized light incidence under effective medium theory are studied[77].
    (a) Illustration of an independent tunable multipurpose absorber using a monolayer metal-graphene metamaterial. (b) Top view of a single structural unit. (c) Absorption spectra obtained by Ef1 independently. (d) Absorption spectra obtained by Ef2 independently[128]. (e) Schematic diagram of polarized light incident into the absorber structural unit. (f) Absorption of T Tc and T > Tc is simulated, respectively[137]. (g) The proposed 3D schematic diagram of DTA based on VO2. (h) Absorption contrast of each characteristic wavelength is calculated when the structural parameters are w = 0–200 nm, h1 = 0–100 nm, h2 = 5–100 nm, h3 = 200 nm, and p = 200 nm. The device structure parameters corresponding to each characteristic wavelength are shown in the inset[141].
    Fig. 7. (a) Illustration of an independent tunable multipurpose absorber using a monolayer metal-graphene metamaterial. (b) Top view of a single structural unit. (c) Absorption spectra obtained by Ef1 independently. (d) Absorption spectra obtained by Ef2 independently[128]. (e) Schematic diagram of polarized light incident into the absorber structural unit. (f) Absorption of T < Tc and T > Tc is simulated, respectively[137]. (g) The proposed 3D schematic diagram of DTA based on VO2. (h) Absorption contrast of each characteristic wavelength is calculated when the structural parameters are w = 0–200 nm, h1 = 0–100 nm, h2 = 5–100 nm, h3 = 200 nm, and p = 200 nm. The device structure parameters corresponding to each characteristic wavelength are shown in the inset[141].
    (a) Schematic and section in 3D of the solar absorber designed. (b) Absorption spectra of the solar absorber, MSM structure, and MSM structure without the ITO layer. (c) Standard spectrum and absorption spectrum of the solar absorber at AM 1.5. (d) Solar energy absorption and leakage in the full spectrum of solar energy[67].
    Fig. 8. (a) Schematic and section in 3D of the solar absorber designed. (b) Absorption spectra of the solar absorber, MSM structure, and MSM structure without the ITO layer. (c) Standard spectrum and absorption spectrum of the solar absorber at AM 1.5. (d) Solar energy absorption and leakage in the full spectrum of solar energy[67].
    (a) Basic unit and structural parameters of the absorber. (b) Absorption of the nanocones composed of Bi2Te3, Cr, Si, and Si covered with Cr layer, respectively[172].
    Fig. 9. (a) Basic unit and structural parameters of the absorber. (b) Absorption of the nanocones composed of Bi2Te3, Cr, Si, and Si covered with Cr layer, respectively[172].
    (a) Schematic 3D view of the proposed graphene structure. (b) The front view of a unit cell of the structure. (c) Reflection spectra of the graphene structure in different environment media. (d) The corresponding S[190].
    Fig. 10. (a) Schematic 3D view of the proposed graphene structure. (b) The front view of a unit cell of the structure. (c) Reflection spectra of the graphene structure in different environment media. (d) The corresponding S[190].
    (a) Absorption spectra for different graphene chemical potentials and temperatures. Schematic of ON and OFF states[197]. (b) Illustration of the switchable state[141]. (c) The reflection spectra of the designed metasurface at 60°C (insulator phase) and 88°C (metallic phase)[201].
    Fig. 11. (a) Absorption spectra for different graphene chemical potentials and temperatures. Schematic of ON and OFF states[197]. (b) Illustration of the switchable state[141]. (c) The reflection spectra of the designed metasurface at 60°C (insulator phase) and 88°C (metallic phase)[201].
    (a) Illustration of asymmetric FP nanocavity absorber. Reproduced with permission from Ref. [216] Copyright 2021, American Chemical Society. (b) Measured (solid line) and simulated (dashed line) reflectance spectra and corresponding colors at different FP cavity thicknesses[216]. (c) Illustration of the proposed VO2 dynamic structural colors. The reflected light varies with Ag film and VO2 thickness at (d) 30°C and (e) 100°C[217].
    Fig. 12. (a) Illustration of asymmetric FP nanocavity absorber. Reproduced with permission from Ref. [216] Copyright 2021, American Chemical Society. (b) Measured (solid line) and simulated (dashed line) reflectance spectra and corresponding colors at different FP cavity thicknesses[216]. (c) Illustration of the proposed VO2 dynamic structural colors. The reflected light varies with Ag film and VO2 thickness at (d) 30°C and (e) 100°C[217].
    Work byDevice ConfigurationBandwidthAbsorptanceReference
    Chen et al. (2021)MgF2 and Cr900–1900 nm>90%[114]
    Cai et al. (2020)SiO2 film and Ti substrate300–2100 nm98.3%[106]
    Yue et al. (2020)Al and ZnS0.2–15 µm (UV-LWIR)Angle of 50°>90%, angle of 60°>80%[77]
    Liu et al. (2020)Si, Ti, MgF2, and Al405–1505 nm (vis-to-NIR)95.14%[69]
    Zhang et al. (2020)TiN/TiO20.5–1.8 µm (vis-to-NIR)95.6%[65]
    Ijaz et al. (2021)ZrN400–800 nm 280–2200 nm>95%>86%[66]
    Zhao et al. (2020)Ge and SiO2450–750 nm (vis)97.4%[115]
    Dong et al. (2021)ITO and HfO2300–1000 nmAverage 96%, maximum>99%[116]
    Zhong et al. (2021)Ti0.38–2.0 µm (vis-to-NIR)Average 93.6%, maximum 98.9%[117]
    Guo et al. (2021)TiN100–2500 nm (vis-to-NIR)Average 96.11%[118]
    Zhou et al. (2021)Ti and Si (MIM)400–2500 nm (vis-to-NIR)Average 93.8%, maximum 99.8%[119]
    Qian et al. (2021)SiO2, Si, Cr, and Al400–1800 nm96.1%[120]
    Piao et al. (2021)TiN300–2500 nm>99%[121]
    Zhang et al. (2020)W and SiO2300–1200 nmTE: average 96%, maximum 99.4%; TM: average 91%, maximum 99.8%[122]
    Table 1. Comparison of Representative Theoretical and Experimental Works on the Topic of Ultra-Broadband MPAs in Recent Years
    Opto-Electronic DevicesAdvantageDisadvantageReference
    Solar cellHigh efficiencyExpensiveness[67,145148]
    SensorSensitivityComplex structure[185,189191]
    SwitchIntegration; high switching ratioHigh preparation requirements[140,141,197,201]
    Structural colorStability; environmental protectionHigh cost; low production efficiency[210,216,217]
    Table 2. The Advantages and Disadvantages of Opto-Electronic Devices Based on MPA
    Shu Zong, Dongwen Zeng, Wen Yuan, Guiqiang Liu, Zhengqi Liu. Recent advances on perfect light absorbers and their promise for high-performance opto-electronic devices [Invited][J]. Chinese Optics Letters, 2022, 20(7): 073603
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