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Journal of Semiconductors
Vol. 45, Issue 1, 012502 (2024)

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Guang Yang^1、3, Lingbo Xu^1、3, Can Cui^1、*, Xiaodong Pi^2、3、**, Deren Yang^2、3, and Rong Wang^2、3、***

Author Affiliations

¹Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

²State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

³Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China

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DOI: 10.1088/1674-4926/45/1/012502 Cite this Article

Guang Yang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights[J]. Journal of Semiconductors, 2024, 45(1): 012502 Copy Citation Text

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References

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Guang Yang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights[J]. Journal of Semiconductors, 2024, 45(1): 012502

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