[2] Chris G. van de Walle. Hydrogen as a cause of doping in zinc oxide[J]. Phys. Rev. Lett., 2000, 85(5): 1012~1015
[3] Naoki Ohashi, Takamasa Ishigaki, Nobuhiro Okada et al.. Passivation of active recombination centers in ZnO by hydrogen doping[J]. J. Appl. Phys., 2003, 93(10): 6386~6392
[4] Yuri M. Strzhemechny, John Nemergut, Phillip E. Smith et al.. Remote hydrogen plasma processing of ZnO single crystal surfaces[J]. J. Appl. Phys., 2003, 94(7): 4256~4262
[5] Yuri M. Strzhemechny, Howard L. Mosbacker, David C. Look et al.. Remote hydrogen plasma doping of single crystal ZnO[J]. Appl. Phys. Lett., 2004, 84(14): 2545~2547
[6] Zhen Zhou, K. Kato, T. Komaki et al.. Effects of hydrogen doping through ion implantation on the electrical conductivity of ZnO[J]. International J. Hydrogen Energy, 2004, 29: 323~327
[7] K. Ip, M. E. Overberg, Y. W. Heo et al.. Thermal stability of ionimplanted hydrogen in ZnO[J]. Appl. Phys. Lett., 2002, 81(21): 3996~3998
[8] Seung Yeop Myong, Koeng Su Lim. Highly stable and textured hydrogenated ZnO thin films[J]. Appl. Phys. Lett., 2003, 82(18): 3026~3028
[9] K. Ip, M. E. Overberg, Y. W. Heo et al.. Hydrogen incorporation and diffusivity in plasmaexposed bulk ZnO[J]. Appl. Phys. Lett., 2003, 82(3): 385~387
[10] K. Ip, M. E. Overberg, Y. W. Heo et al.. Hydrogen incorporation, diffusivity and evolution in bulk ZnO[J]. SolidState Electronics, 2003, 47(12): 2255~2259
[11] D. C. Look, R. L. Jones, J. R. Sizelove et al.. The path to ZnO devices: donor and acceptor dynamics[J]. Phys. Stat. Sol. (A), 2003, 195(1): 171~177
[12] K. Thonke, Th. Gruber, N. Teofilov et al.. Donoracceptor pair transitions in ZnO substrate material[J]. Physica B, 2001, 308~310: 945~948
[13] LiangYih Chen, WenHwa Chen, JiaJun Wang et al.. Hydrogendoped high conductivity ZnO films deposited by radiofrequency magnetron sputtering[J]. Appl. Phys. Lett., 2004, 85(23): 5628~5630
[14] J. K. Lee, M. Nastasi, D. W. Hamby et al.. Optical observation of donorbound excitons in hydrogenimplanted ZnO[J]. Appl. Phys. Lett., 2005, 86(17): 171102~171104
[15] H. Alves, D. Pfisterer, A. Zeuner et al.. Optical investigations on excitons bound to impurities and dislocations in ZnO[J]. Opt. Mater., 2003, 23(1~2): 33~37
[16] Jiangnan Dai, Hechu Liu, Wenqing Fang et al.. Atmospheric pressure MOCVD growth of highquality ZnO films on GaN/Al2O3 templates[J]. J. Crystal Growth, 2005, 283(1~2): 93~99
[17] Li Wang, Yong Pu, Wenqing Fang et al.. Highquality ZnO films grown by atompheric pressure metalorganic chemical vapor deposition[J]. J. Crystal Growth, 2005, 283(1~2): 87~92