Study on Zn composition distributions in Cd1-xZnxTe wafers grown in the Shenzhou 3 by micro-photoluminescence

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 22 >Issue 2 >Page 238 > Article

Chinese Journal of Quantum Electronics
Vol. 22, Issue 2, 238 (2005)

Study on Zn composition distributions in Cd_1-xZn_xTe wafers grown in the Shenzhou 3 by micro-photoluminescence

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Zn composition distributions in Cd_1-xZn_xTe wafers grown in the Shenzhou 3 by micro-photoluminescence[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 238 Copy Citation Text

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References

[1] Maxey C D, Gower J E, Capper P, et al. Zn concentration determination in CdZnTe by NIR spectroscopy [J].Journal of Crystal Growth, 1999, 197: 427-434.

[3] Li Z F, Lu W, Huang G S, et al. Microphotoluminescence mapping on CdZnTe: Zn distribution [J]. J. of Appl.Phys., 2001, 90(1): 260-264.

[4] Olego D J, Faurie J P, Sivananthan S, et al. Optoelectronic properties of Cdi_xZnxTe films grown by molecular beam epitaxy on GaAs substrates [J]. Appl. Phys. Lett., 1985, 47(11): 1172-1174.

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