• Journal of Inorganic Materials
  • Vol. 36, Issue 2, 188 (2021)
Meng MENG1、2、3, Qiang QI1、4, Dongzhou DING1、5、*, Chongjun HE2、3、*, Shuwen ZHAO1, Bo WAN1, Lu CHEN1, Junjie SHI1、5, and Guohao REN1、5
Author Affiliations
  • 11. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
  • 22. Key Laboratory of Space Photoelectric Detection and Perception, Ministry of Industry and Information Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • 33. College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • 44. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 55. Fujian Institute of Innovation, Chinese Academy of Sciences, Fujian 350002, China
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    DOI: 10.15541/jim20200268 Cite this Article
    Meng MENG, Qiang QI, Dongzhou DING, Chongjun HE, Shuwen ZHAO, Bo WAN, Lu CHEN, Junjie SHI, Guohao REN. Twisted Growth, Component Segregation and Characteristics of Gd3(Al,Ga)5O12:Ce Scintillation Crystal[J]. Journal of Inorganic Materials, 2021, 36(2): 188 Copy Citation Text show less
    Photo of polycrystal twisted growth GAGG:Ce crystal
    1. Photo of polycrystal twisted growth GAGG:Ce crystal
    Photo and XRD pattern of volatiles during crystal growth of GAGG:Ce: (a) volatiles photo; (b) XRD pattern
    2. Photo and XRD pattern of volatiles during crystal growth of GAGG:Ce: (a) volatiles photo; (b) XRD pattern
    Gd2O3-Ga2O3 phase diagram[11]
    3. Gd2O3-Ga2O3 phase diagram[11]
    XRD patterns of polycrystal twisted growth crystal powder
    4. XRD patterns of polycrystal twisted growth crystal powder
    Random protrusions, indentations and iridium attachments of GAGG:Ce crystal
    5. Random protrusions, indentations and iridium attachments of GAGG:Ce crystal
    Photo of GAGG:Ce Crystal with partial component
    6. Photo of GAGG:Ce Crystal with partial component
    XRD patterns of crystal head and tail powder
    7. XRD patterns of crystal head and tail powder
    SEM image of GAGG:Ce crystal
    8. SEM image of GAGG:Ce crystal
    X-ray excited spectra of partial crystal and ceramics
    9. X-ray excited spectra of partial crystal and ceramics
    Photo of GAGG:1%Ce crystal grown by Czochralski method
    10. Photo of GAGG:1%Ce crystal grown by Czochralski method
    Transmission and X-ray excited spectra of GAGG:1% crystal at room temperature
    11. Transmission and X-ray excited spectra of GAGG:1% crystal at room temperature
    Multi-channel energy spectra of GAGG:1%Ce crystal excited by 137Cs
    12. Multi-channel energy spectra of GAGG:1%Ce crystal excited by 137Cs
    GAGG:1%Ce crystal time behavior
    13. GAGG:1%Ce crystal time behavior
    SamplenGd : nAl : nGa
    Melt3.0 : 2.3 : 2.7
    Twisted growth crystal3.00 : 3.57 : 0.83
    Table 1. Component analysis data by Inductively Coupled Plasma Optical Emission Spectrum (ICP-OES) of polycrystal twisted growth samples
    SamplenGd : nA : nGa
    Melt3.0 : 2.3 : 2.7
    Crystal head3.00 : 3.56 : 1.57
    Crystal tail3.0 : 2.3 : 2.7
    Table 2. Component analysis data by Inductively Coupled Plasma Optical Emission Spectrum (ICP-OES) of crystal head and tail samples
    SpectrumMole fraction/mol%Ratio of ions
    GdCeAl+GaOGd:(Al+Ga):O
    1 (inclusion)20.61-19.39601 : 1 : 3
    2 (matrix)14.97-25.03603 : 5 : 12
    Table 3. Component analysis data by Electronic Differential System (EDS) of GAGG:Ce crystal
    Parameterλ/nm
    400475520575625700
    n1.9511.9191.911.9041.91.898
    T/%81.1781.9782.1882.3482.4382.48
    Table 4. Refractive index and theoretical transmittance of GAGG:1%Ce crystal
    Meng MENG, Qiang QI, Dongzhou DING, Chongjun HE, Shuwen ZHAO, Bo WAN, Lu CHEN, Junjie SHI, Guohao REN. Twisted Growth, Component Segregation and Characteristics of Gd3(Al,Ga)5O12:Ce Scintillation Crystal[J]. Journal of Inorganic Materials, 2021, 36(2): 188
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