GaNbased blue and green laser diodes have important applications and large market demands in projection display, laser processing, laser lighting, storage and other fields. This paper focuses on the technical difficulties of GaNbased blue and green edge emitting laser diodes and our corresponding solutions.Optimization methods of layer structures and technology for GaNbased blue and green laser diodes are introduced including fabricating high quality InGaN/GaN multiple quantum wells(MQWs), reducing internal optical loss and increasing hole injection efficiency. The research status of vertical cavity surface emitting laser (VCSEL) and distributed feedback laser (DFB) are briefly introduced.