Amorphous hydrogenated silicon carbide(a-SiC∶H) films were annealed by KrF excimer laser to realize crystallization. a-SiC∶H films were prepared by plasma enhanced chemical vapor deposition (PECVD) and then irradiated by KrF excimer laser pulses at different power densities. The results indicate that laser annealing at a proper density is an effective way to realize material crystallization, and the crystal size gets bigger as the incident laser power increases. It is observed from the micrograph that when the incident laser power is over 200 mJ/cm2, the phenomena of surface corrugation caused by thermal elastic wave come into being on the surface of films after laser annealing, and a-SiC∶H films are transformed by liquid crystallization. FTIR indicates that the content of hydrogen decreases, the peak of Si-C enhances and blue shift occurs, all of which imply the crystallization of a-SiC∶H films improves.