[1] Zeng Weiqiang,Yao Jianke,He Hongbo et al..Influence of substrate temperature on the properties of tin-doped indium oxide thin films prepared by direct current magnetron sputtering [J].Chinese J.Lasers,2008,35(12):2031-2035

[2] Jong Hoon Kim,Kyung Ah Jeon,Gun Hee Kim et al..Electrical,structural and optical properties of ITO thin films prepared at room temperature by pulsed laser deposition [J].Appl.Surf.Sci.,2006,252(13):4834-4837

[3] Cheng Lishun,Sun Benshuang,Zhong Jingming et al..Development of ITO transparent and conductive thin films [J].Rare Metals Letters.2008,3(27):10-16

[4] Sun Zhaoqi,Cao Chunbin,Song Xueping et al..Study on ellipsometric spectra of ITO film [J].Acta Optica Sinica,2008,28(2):403-408

[5] Y.H.Aliyu,D.V.Morgan,H.Thomas.High performance AlGaInP LEDs using reactive thermally evaporated transparent conducting indium-tin-oxide (ITO) [C].IEEE Cornell Conference on Advanced Concepts in High Speed Semicondnctor Devices and Ciracits,1995.323-332

[6] C.H.Yen,Y.J.Liu,K.H.Yu et al..On an AlGaInP-based light-emitting diode with an ITO direct Ohmic contact structure [J].IEEE Electr on Device Lett.,2009,30(4):359-361

[7] R.M.Perks,J.Kettle,A.Porch et al..Monte Carlo simulation of indium tin oxide current spreading layers in light emitting diodes [J].Thin Solid Films,2007,515(24):8660-8663

[8] C.S.Chang,S.J.Chang,Y.K.Su et al..High brightness InGaN Green LEDs With an ITO on n++-SPS upper contact [J].IEEE Trans.Electron.Devices,2003,50(11):2208-2212

[9] Yang Tianlin,Gao Xutuan,Yang Guangde.Using ITO Films solving questions of current spreading in the window-layer of the AlGaInP LED [J].Journal of Zibo University,2001,3(3):31-34

[10] T.Margalith,O.Buchinsky,D.A.Cohen et al..Indium tin oxide contacts to gallium nitride optoelectronic devices [J].Appl.Phys.Lett.,1999,74(26):3930-3932

[11] H.C.Wang,Y.K.Su,C.L.Lin et al..Improvement of AlGaInP multiple-quantum-well light-emitting diodes by modification of Ohmic contact layer [J].Jpn J.Appl.Phys.,2004,43(4B):1934-1936

[12] S.C.Hsu,D.S.Wuu,X.h.Zheng et al..High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer [J].Jpn J.Appl.Phys.,2008,47(9):7023-7025

[13] Y.C.Lin,S.J.Chang,Y.K.Su et al..InGaN/GaN light emitting diodes with Ni/Au,Ni/ITO and ITO p-type contacts [J].Solid State Electron.,2003,47(5):849-853

[14] K.M.Chang,J.Y.Chu,C.C.Cheng.Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure [J].IEEE Photonic.Technol.Lett.,2004,16(8):1807-1809

[15] J.O.Song,D.S.Leem,J.S.Kwak et al..Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type Ohmic contacts [J].IEEE Photonic.tech.Lett.,2005,17(2):291-293

[16] A.Tukiainen,J.Dekker,T.Leinonen et al..Characterization of deep levels in rapid thermal annealed AlGaInP [J ] .Mat.Sci.Eng.B-Solid.,2002,9192(15):389-392

[17] Li Shuti,Fan Guanghan,Zhou Tianming.The influence of thermal annealing to the carrier concentration of p-Gap and p-AlGaInP layers [J].Journal of South China Normal University,2004,1(1):67-70

[18] Wu Dingfeng.The Principles,Test and Technical Characteristics of Metal-semiconduct Ohmic Contact [M].Shanghai:Shanghai Jiaotong University Press,1989:121-145

[19] Ma Ying,Han Wei,Zhang Fanghui.Effects of annealing temperature on the structure and sheet resistance of ITO films with X-ray diffraction techniques [J].Chinese J.Liquid Crystals and Displays,2005,20(14):314-317

[20] Furong Zhu,C.H.A.Huanb,Keran Zhang et al..Investigation of annealing effects on indium tin oxide thin flms by electron energy loss spectroscopy [J].Thin Solid Films,2000,359(2):244-250

[21] Cao Mingde.Study of DBR of High Brightness Light Emitting Diodes [D].Guangzhou:South China Normal University,2006.10-11