• Microelectronics
  • Vol. 51, Issue 2, 179 (2021)
WAN Hezhan, ZHANG Wanrong, XIE Hongyun, JIN Dongyue, NA Weicong, ZHANG Sijia, and ZHANG Zhao
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200212 Cite this Article
    WAN Hezhan, ZHANG Wanrong, XIE Hongyun, JIN Dongyue, NA Weicong, ZHANG Sijia, ZHANG Zhao. A High Frequency Differential Active InductorUsing LC Resonance Circuit[J]. Microelectronics, 2021, 51(2): 179 Copy Citation Text show less

    Abstract

    A new type of differential active inductor based on LC parallel resonant circuit was proposed, which could achieve wide operating frequency band, high Q value, large inductance value and tunable performance. The LC resonant circuit was composed of passive inductor and variable capacitor of MOS transistor, which reduced the equivalent series resistance and equivalent shunt capacitance, and enlarged the working frequency band while increasing the inductance and Q values. The simulation results showed that the inductance value was greater than 26 nH and the Q value was greater than 138 at 2~ 7.6 GHz for the new differential active inductor. The inductance value was up to 130 nH, and the Q value was up to 418 at 7.6 GHz high frequency, so this inductor achieved high Q value and high inductance at wide operating band range. Compared with traditional differential active inductors and single-ended active inductors with LC resonant circuit, the performance of this new differential active inductors was better.
    WAN Hezhan, ZHANG Wanrong, XIE Hongyun, JIN Dongyue, NA Weicong, ZHANG Sijia, ZHANG Zhao. A High Frequency Differential Active InductorUsing LC Resonance Circuit[J]. Microelectronics, 2021, 51(2): 179
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