• Infrared and Laser Engineering
  • Vol. 37, Issue 2, 326 (2008)
[in Chinese]1、*, [in Chinese]2, [in Chinese]2, [in Chinese]3, [in Chinese]1, [in Chinese]2, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Application of OES diagnostics on plasma etching[J]. Infrared and Laser Engineering, 2008, 37(2): 326 Copy Citation Text show less
    References

    [1] WARD P P.Plasma process control with optical emission spectroscopy[C]//Electronics Manufacturing Technology Symposium,1995.apos;Manufacturing Technologies-Present and Futureapos;Seventeenth IEEE,cPMT International,1995:166-169.

    [2] YUE H H,QIN S J,WISEMAN J,et al.Plasma etching endpoint detection using muhipule wavelengths for small openarea wafers[J].J Vae Sci Technol,2001,A 19(1):66-75.

    [3] HERSHKOWlTZ N,BREUN R A.Diagnostics for plasma processing[J].Rev Sei Instrum,1997,68(1):880-885.

    [4] HUDSION E A,DASSAPA F C.Sensitive end-point detection for dielectric etch[J].J Electrochem Soc,2001,148(3):C236-C239.

    [5] DONNELL Y V M,MALYSHEV M V,SCHABEL M,et al.Optical plasma emission spectroscopy of etching plasmas used in Si-based semiconductor processing[J].Plasmas sources Science Technology,2002,11:A26-A30.

    [6] CHEN R,HUANG H,SPANOS C J.Plasma etch modeling using optical emission spectroscopy[J].J Vac Sci Teclmol,1996,A 14(3):1901-1906.

    [7] SHADMEHR R CHOU P,CHOU P.Principal component analysis of optical emission spectroscopy and nlass spectrometry:application to reactive ion etch process parameter estimation using neural network[J].J Electrochem Soc,1992,139(3):907-914.

    [8] YUE H H,QIN S J,wISEMAN J,et al.Plasma etching endpoint detection using multipule wavelengths for small openarea wafers[J].J Vac Sci Technol,2001,A 19(1):66-75.

    [9] WHITE D A,GOODLIN B E,GOWER A E,et al.Low openarea endpoint detection using a PCA-based T2 statistic and Q statistic on optical emission spectroscopy measurements[J].Semiconduct Manufact,2000,13(2):193-207.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Application of OES diagnostics on plasma etching[J]. Infrared and Laser Engineering, 2008, 37(2): 326
    Download Citation