800 nm Bragg mirror type of semiconductor saturable absorber mirror

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 21 >Issue 5 >Page 597 > Article

Chinese Journal of Quantum Electronics
Vol. 21, Issue 5, 597 (2004)

800 nm Bragg mirror type of semiconductor saturable absorber mirror

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]³, [in Chinese]³, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 800 nm Bragg mirror type of semiconductor saturable absorber mirror[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 597 Copy Citation Text

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Abstract

Bragg mirror type of semiconductor saturable absorption mirror near 800 nm was made first time in China, by which we realized passive continuous wave modelocking for Arion laser pumped Ti-sapphire laser. Continuous wave modelocking series with frequency range from 100 MHz to 200 MHz were obtained.

Keywords

Bragg mirror laser techniques passive continuous wave modelocking semiconductor saturable absorption mirror Ti: sapphire laser

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