[1] A Rogalski. HgCdTe infrared detector material: history, status and outlook. Reports on Progress in Physics, 68, 2267-2336(2005).
[2] A Rogalski. HgCdTe infrared detectors - Historical prospect. Proc SPIE, 4999, 431-442(2003).
[3] J C A Sher. Physics and properties of narrow gap semiconductors. NY(2008).
[4] S Datta, B Das. Electronic analog of the electro‐optic modulator. Applied Physics Letters, 56, 665-667(1990).
[5] S Iordanskii, Y B Lyanda-Geller, G Pikus. JETP Lett 60, 206 (1994). Pis’ ma Zh Eksp Teor Fiz, 60, 199-206(1994).
[6] G M Minkov, A V Germanenko, O E Rut. Weak antilocalization in quantum wells in tilted magnetic fields. Physical Review B, 70, 155323(2004).
[7] L E Golub. Weak antilocalization in high-mobility two-dimensional systems. Physical Review B, 71, 23510(2005).
[8] A G Mal’Shukov, K A Chao, M Willander. Magnetoresistance of a weakly disordered III-V semiconductor quantum well in a magnetic field parallel to interfaces. Physical Review B, 56, 6436-6439(1997).
[9] A G Mal’Shukov, V A Froltsov, K A Chao. Crystal anisotropy effects on the weak-localization magnetoresistance of a III-V semiconductor quantum well in a magnetic field parallel to interfaces. Physical Review B, 59, 5702-5710(1999).
[10] S A Studenikin, P T Coleridge, G Yu. Electron spin–orbit splitting in a InGaAs/InP quantum well studied by means of the weak-antilocalization and spin-zero effects in tilted magnetic fields. Semiconductor Science and Technology, 20, 1103-1110(2005).
[11] S Cabañas, T Schäpers, N Thillosen. Suppression of weak antilocalization in an AlxGa1-xN∕GaN two-dimensional electron gas by an in-plane magnetic field. Physical Review B, 75, 195329(2007).
[12] N Thillosen, T Schäpers, N Kaluza. Weak antilocalization in a polarization-doped AlxGa1-xN∕GaN heterostructure with single subband occupation. Applied Physics Letters, 88, 022111(2006).
[13] M Lv, G Yu, Y Xu. Dependence of spin dynamics on in-plane magnetic field in AlGaN/GaN quantum wells. EPL (Europhysics Letters), 112, 67003(2015).
[14] V López-Richard, G E Marques, C Trallero-Giner. Anomalous Landé factor in narrow-gap semiconductor heterostructures. Solid State Communications, 114, 649-654(2000).
[15] X C Zhang, K Ortner, A Pfeuffer-Jeschke. Effective g factor of n-type HgTe/Hg1-xCdxTe single quantum wells. Physical Review B, 69, 1153401-1153407(2004).
[16] Z J Qiu, Y S Gui, X Z Shu. Giant Rashba spin splitting in HgTe/HgCdTe quantum wells. Acta Physica Sinica, 53, 1186-1190(2004).
[17] G Z Zheng, S L Guo, D Y Tang. Shubnikov-de haas oscillation in n-Hg1-xCdxTe. Acta Physica Sinica, 36, 114-119(1987).
[18] S V Gudina, V N Neverov, E V Ilchenko. Electron effective mass and g factor in wide HgTe quantum wells. Semiconductors, 52, 12-18(2018).
[19] M Kohda, J Nitta. Enhancement of spin-orbit interaction and the effect of interface diffusion in quaternary InGaAsP/InGaAs heterostructures. Physical Review B, 81, 115118(2010).
[20] H Mathur, H U Baranger. Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET’s. Physical Review B, 64, 235325(2001).
[21] J S Meyer, A Altland, B L Altshuler. Quantum transport in parallel magnetic fields: A realization of the Berry-Robnik symmetry phenomenon. Physical Review Letters, 89, 206601(2002).
[22] X Z Liu, G Yu, L M Wei. The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis. Journal of Applied Physics, 113, 013704(2013).
[23] J H Chu, Z Y Mi, R Sizmann. Subband structure in the electric quantum limit for Hg1-xCdxTe. Physical Review B, 44, 1717-1723(1991).
[24] L Sun, M Lv, X Liu. Zeeman splitting and spin-orbit interaction in Hg1-xCdxTe inversion layers. EPL (Europhysics Letters), 115, 17007(2016).
[25] R Yang, K Gao, L Wei. Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe. Applied Physics Letters, 99, 042103(2011).
[26] J Zhu, H L Stormer, L N Pfeiffer. Spin susceptibility of an ultra-low-density two-dimensional electron system. Physical Review Letters, 90, 056805(2003).