Theoretical Design Method of 980nm Strained Single Quantum Well

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 27 >Issue 8 >Page 682 > Article

Chinese Journal of Lasers
Vol. 27, Issue 8, 682 (2000)

Theoretical Design Method of 980nm Strained Single Quantum Well

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Theoretical Design Method of 980nm Strained Single Quantum Well[J]. Chinese Journal of Lasers, 2000, 27(8): 682 Copy Citation Text

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Abstract

A calculation method of strained single quantum well width is introduced. For a given material components, the width of 980 nm strained single quantum well is calculated according to the theory of strained effect and the processing method of the limited depth quantum well. The calculation value is in accord with the experiment result.

Keywords

semiconductor laser single quantum well strained-layer

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Theoretical Design Method of 980nm Strained Single Quantum Well[J]. Chinese Journal of Lasers, 2000, 27(8): 682

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