• Infrared and Laser Engineering
  • Vol. 45, Issue 12, 1221001 (2016)
Zhang Shengbin*, Zuo Dunwen, and Lu Wenzhuang
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/irla201645.1221001 Cite this Article
    Zhang Shengbin, Zuo Dunwen, Lu Wenzhuang. Optical and electrical properties of vanadium pentoxide films deposited on diamond substrates[J]. Infrared and Laser Engineering, 2016, 45(12): 1221001 Copy Citation Text show less

    Abstract

    Vanadium oxide films(V2O5) were deposited under 35 min by RF reactive magnetron sputtering at the substrates of single-crystal diamond. Its structure, thickness, surface morphology, electrical performances and optical performances were studied. The results indicated that the deposited film is polycrystalline V2O5 film on(001) preferred orientation, possessing great crystallization behavior and the surface topography. In term of electrical performance, the V2O5 films′ temperature-resistance characteristics were tested under three thicknesses, and the electrical mutation is best when the thickness is 150 nm. The optical-switching properties of the films were tested, and process of phase transition and recovery would occur when the films were irradiated by high-energy laser. The optical closing times range from 1.6 ms to 2.5 ms, and the response times vary from 26 ms to 33 ms, which indicate that the films′ response time increases with the increase of film thickness.
    Zhang Shengbin, Zuo Dunwen, Lu Wenzhuang. Optical and electrical properties of vanadium pentoxide films deposited on diamond substrates[J]. Infrared and Laser Engineering, 2016, 45(12): 1221001
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