Fabrication and Characterization of High-Speed and High-Efficiency Photodetector

Liu Shaoqing; Han Qin; Yang Xiaohong; Liu Yu; Wang Jie; Wang Xiuping

doi:10.3788/lop49.022301

[1] Y. S. Wang, S. J. Chang, C. L. Tsai et al.. 10-Gb/s planar InGaAs p-i-n photodetectors［J］. IEEE Sensors J., 2010, 10(10)： 1559～1563

[2] Y. S. Liao, G. R. Lin, H. C. Kuo et al.. 10-Gb/s operation of an InGaAs pin photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate［J］. IEEE Photon. Technol. Lett., 2006, 18(17): 1822～1824

[3] B. Zhu, Q. Han, X. H. Yang et al.. Metamorphic InGaAs p-i-n photodetectors with 1.75 μm cut-off wavelength grown on GaAs［J］. Chin. Phys. Lett., 2010, 27(3): 038504

[4] J. W. Park. High-responsivity and high-speed waveguide photodiode with a thin absorption region［J］. IEEE Photon. Technol. Lett., 2010, 22(13): 975～977

[5] L. Xu, M. Nikoufard, Xaveer J. M. Leijtens et al.. High-performance InP-based photodetector in an amplifier layer stack on semi-insulating substrate［J］. IEEE Photon. Technol. Lett., 2008, 20(23): 1941～1943

[6] Tang Hengjing， Li Yongfu， Li Xue et al.. Experimental study on polarization dependent response of InGaAs photodetector［J］. Laser & Optoelectronics Progress, 2011, 48(4): 040401

[7] Xie Sanxian， Huang Yongqing， Liu Qing et al.. Theoretical analysis of quantum efficiency of novel dual-absorption photodetector［J］. Laser & Optoelectronics Progress, 2011, 48(5): 052301

[8] Duan Xiaofeng， Huang Yongqing， Wang Qi et al.. A wavelength selectivity monolithically integrated photodetector arry［J］. Chinese J. Lasers, 2009, 36(9): 2362～2366

[9] Y. S. Wang, S. J. Chang, C. L. Tsai et al.. High-speed InGaAs p-i-n photodetector with planar buried heterostructure［J］.IEEE Trans. Electron. Dev., 2009, 56(6): 1347～1350

[10] X. Wang, N. Duan, H. Chen et al.. InGaAs-InP photodiodes with high responsivity and high saturation power［J］. IEEE Photon. Technol. Lett., 2007, 19(16): 1272～1274

[11] P. L. Liu, K. J. Williams, M. Y. Frankel et al.. Saturation characteristics of fast photodetectors［J］. IEEE Trans. Microwave Theory Technol., 1999, 47(7): 1297～1303

[12] D. A. Tulchinsky, X. W. Li, N. Li et al.. High-saturation current wide-bandwidth photodetectors［J］. IEEE J. Sel. Top. Quantum Electron., 2004, 10(4): 702～708

[13] X. W. Li, N. Li, X. G. Zheng et al.. High-saturation-current InP-InGaAs photodiode with partially depleted absorber［J］. IEEE Photon. Technol. Lett., 2003, 15(9): 1276～1278

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