• Microelectronics
  • Vol. 51, Issue 4, 461 (2021)
YANG Xiaoyu1、2, WANG Yonglu2、3, and SUN Wei2、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200428 Cite this Article
    YANG Xiaoyu, WANG Yonglu, SUN Wei. A 25 GHz Ultra-Wideband S/H Circuit Based on 013 μm SiGe BJT Process[J]. Microelectronics, 2021, 51(4): 461 Copy Citation Text show less

    Abstract

    An ultra-wideband sampling/holding circuit was designed in a 013 μm SiGe BJT process. The auxiliary switching circuit was used to process the signal in advance, which improved the linearity of the circuit. The fully differential open loop structure and multi-stage cascade output buffer were adopted to reduce the sagging rate effectively. The simulation was performed by Cadence Spectre at 5 V supply voltage and 100 fF load capacitance. The results showed that the clock frequency was 4 GHz under coherent sampling. At high frequency of 18 GHz, the SFDR reached 6399 dB, so the high frequency characteristics was good. The bandwidth of the circuit was up to 251 GHz. It was suitable for high speed A/D converters.
    YANG Xiaoyu, WANG Yonglu, SUN Wei. A 25 GHz Ultra-Wideband S/H Circuit Based on 013 μm SiGe BJT Process[J]. Microelectronics, 2021, 51(4): 461
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