• Optoelectronics Letters
  • Vol. 12, Issue 5, 337 (2016)
Hao ZHU, Zu-bin ZHAO, Huan-qi CAO, Hao YU, Jin-zhao LI, Xiao-min CHEN, Su-juan DONG, Li-ying YANG, and Shou-gen YIN*
Author Affiliations
  • Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education of China, Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
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    DOI: 10.1007/s11801-016-6175-2 Cite this Article
    ZHU Hao, ZHAO Zu-bin, CAO Huan-qi, YU Hao, LI Jin-zhao, CHEN Xiao-min, DONG Su-juan, YANG Li-ying, YIN Shou-gen. Determination of bandgaps of photoactive materials in perovskite solar cells at high temperatures by in-situ temperature-dependent resistance measurement[J]. Optoelectronics Letters, 2016, 12(5): 337 Copy Citation Text show less

    Abstract

    Normally, it is difficult to directly measure the bandgaps of perovskite based on methylammonium (MA) or formamidinium (FA) at high temperatures due to material decomposition. We prevent the decomposition by keeping the synthesized perovskite films (MAPbI3and MAPbI3) in organic iodide vapors, then measure the in-situ resistance of the films at varied temperatures, and further evaluate the bandgaps of these two materials. The evaluated bandgaps are consistent with the results from ultraviolet-visible (UV-vis) absorption spectrum. The bandgap of MAPbI3decreases with temperature above 95 °C, whereas that of FAPbI3 first increases with temperature from 95 °C to 107 °C and then decreases with temperature above 107 °C.
    ZHU Hao, ZHAO Zu-bin, CAO Huan-qi, YU Hao, LI Jin-zhao, CHEN Xiao-min, DONG Su-juan, YANG Li-ying, YIN Shou-gen. Determination of bandgaps of photoactive materials in perovskite solar cells at high temperatures by in-situ temperature-dependent resistance measurement[J]. Optoelectronics Letters, 2016, 12(5): 337
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