Xinying Yu, Sen Yang, Dongyan Fan. Design of Tunable Polarization Insensitive Terahertz Absorber[J]. Laser & Optoelectronics Progress, 2022, 59(3): 0316004
- Laser & Optoelectronics Progress
- Vol. 59, Issue 3, 0316004 (2022)
Fig. 1. Structure of fourfold symmetrical polarization-insensitive terahertz absorber
Fig. 2. Structure of the tunable terahertz absorber based on photosensitive silicon
Fig. 3. Structure of the tunable terahertz absorber based on silicon and germanium
Fig. 4. Absorptivity of fourfold symmetrical polarization-insensitive terahertz absorber
Fig. 5. Current distribution of fourfold symmetrical polarization-insensitive terahertz absorber. (a) Bottom current distribution of TE mode; (b) top current distribution of TE mode; (c) bottom current distribution of TM mode; (d) top current distribution of TM mode
Fig. 6. Relationship between the resonance frequency of the terahertz absorber and lateral length of the top metal
Fig. 7. Influence of polarization angle on absorption performance in different modes. (a) TE mode; (b) TM mode
Fig. 8. Absorption spectrum of the absorber under different conductivity conditions
Fig. 9. Rrelationship between the absorption performance of the terahertz absorber and semiconductor conductivity
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Table 1. Correspondence between the absorption performance of the terahertz absorber and the semiconductor conductivity
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