Diode-end-pumped Nd:YAG 1.32μm CW Ceramic Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 3 >Page 301 > Article

Chinese Journal of Quantum Electronics
Vol. 20, Issue 3, 301 (2003)

Diode-end-pumped Nd:YAG 1.32μm CW Ceramic Laser

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]³, [in Chinese]⁴, and [in Chinese]⁵

Author Affiliations

¹[in Chinese]

²Optical Institute,Technical University Berlin,D-10623 Berlin,Germany

³GaeblerOptical Institute,Technical University Berlin,D-10623 Berlin,Germany

⁴BainingOptical Institute,Technical University Berlin,D-10623 Berlin,Germany

⁵J.EichlerOptical Institute,Technical University Berlin,D-10623 Berlin,Germany

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Diode-end-pumped Nd:YAG 1.32μm CW Ceramic Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(3): 301 Copy Citation Text

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Abstract

In this paper, a diode laser end-pumped continues-wave polycrystalline 1% Nd:YAG ceramic laser at 1.32μm is demonstrated. The lasing threshold is 2.1 W. With an incident pump power of 9 W, an average output power of 690 mW is achieved. The slope efficiency is 11%. To our knowledge, it is a 1.32μm Nd:YAG ceramic laser with a maximum output power which has been reported at present.

Keywords

diode pumped solid-state laser Nd:YAG ceramic Nd:YAG crystal

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Diode-end-pumped Nd:YAG 1.32μm CW Ceramic Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(3): 301

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