The effects of electron-phonon interaction on the optical rectification (OR) is theoretically studied for electrons confined in Morse quantum wells. The wave functions and energy levels are described by perturbation theory when considering the electron-phonon interaction, and analytic expression for the optical rectification is obtained by the compact density method and iterative procedure. The numerical results for typical GaAs/AlGaAs material show that the optical rectification with considering electron-phonon interaction is over 15%～30% greater than the one without considering electron-phonon interaction. Furthermore, the correction of electron-phonon interaction effect on energies of the electron makes the peak shift to the aspect of the high energy.